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Ga2-2xIn2xO3 films with different indium content x [In/(Ga+In) atomic ratio] have been prepared on α-Al2O3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The preparation, structural and photoluminescence (PL) properties of the Ga2-2xIn2xO3 films were investigated. The XRD analysis revealed that the film with high Ga content exhibited monoclinic structure of Ga2O3 and...
In this research, zinc oxide films were prepared on glass substrates by hydrothermal synthesis and metal-organic chemical vapor deposition (MOCVD) respectively. A nanostructured layer of flurocarbon compounds with low surface energy was formed on the films by low-temperature dielectric barrier discharge plasma enhanced chemical vapor deposition (DBD-PECVD), in order to enhance the hydrophobicity of...
Low pressure apparatus combining N2O plasma, DEZn transported in argon and UV irradiation of the deposition zone has been used. ZnO layers were deposited on Si (100) and GaP (111) substrates. Best quality layers were deposited on Si substrates. Growth rate was changed in the range 2 to 90 μm/hour. Surface morphology at smaller growth rate was regular nanowalls type on both Si and GaP substrates. More...
This paper reported the study of growth of AlxGa1-xN thin film on a-plane sapphire substrate using plasma assisted metal organic chemical vapor deposition (PA-MOCVD). We have successfully growth the Al content AlGaN alloys and investigated the influence of TMA/TMAl+TMGa flow rate ratio to their crystal structure and surface morphology. From S EM image and XRD measurement, the AlGaN films grown with...
In this study, vertically aligned ZnO nanowires were grown by metal organic chemical vapor deposition (MOCVD) method. The growth direction of vertically aligned nanowires was along c-axis. For monolithic integration, vertically aligned ZnO nanowires were grown on AlN/Si substrates with a higher aspect ratio in comparison to those on bare silicon substrates. In a separate experiment, micro-patterning...
A-plane n-GaN film has been grown on r-plane sapphire substrate by MOCVD with flow-rate modulation (FME). Under the used growth conditions, the optimized FME parameters include the on/off periods at 60/80 s. With the FME technique, the n-GaN film has a high Hall mobility of 779 cm2/V-s.
Undesired thermal residual stresses and strains always exist in GaN epitaxial film after the process of metal organic chemical vapor deposition (MOCVD) due to difference in thermal expansion coefficients between the silicon substrate and epitaxial layer. These stresses would mostly result in defects such as dislocations, surface roughness, and even cracks in epitaxial layer preventing further device...
In this paper we report the conclusions about the analysis between the characteristics of nitrided thin gallium nitride (GaN) films on GaAs and epitaxial GaN films on buffer nitrided films. We use the metal-organic chemical vapour deposition technique for synthesize these films. Also ones films were characterized using X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM).
The characteristics of gallium nitride (GaN) films growth on gallium arsenide (GaAs) and sapphire (Al2O3) by Metal-organic vapor phase epitaxy (MOVPE) system are presented. Comparing the results we can saw the advantages and disadvantages of use one or other substrate in order to find the best experimental conditions for obtain c-GaN films with good properties.
GaNSb films on the N-rich side have been grown on sapphire substrate at various growth temperatures by MOCVD. The optical properties of the grown films were characterized by absorption spectroscopy and increased absorption below band gap energy was observed for GaNSb grown at 770 degC.
We present the systematic study of the growth mechanism of ZnO nanorods grown on Al2O3 substrates with ZnO homo-buffer, n-GaN and p-GaN interlayers. Vertically aligned ZnO nanorods with diameter of 50 nm and lengths of range of 0.1 - 2 mum were synthesized at the substrate temperature of 350 - 500degC by catalyst-free metal-organic chemical vapor deposition. A thin ZnO film was observed underneath...
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