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We compared to the characteristics of fabricated AlGaN/GaN HEMTs on a Si substrate with conventional ohmic contact and improved ohmic contact. In conventional ohmic contact with metal scheme of Ti/Al/Ni/Au or Ti/Al/Ti/Au, generally ohmic contact resistance is good but, surface topography has bad morphology due to ball-up by low Al melting point at high temperature RTA over 800°C. In order to improve...
Polycrystalline ZnO thin films doped with Al are used as transparent conducting oxide (TCO) for solar cells. For such applications, it is necessary to have control on the contact resistance with metals. In this project, we observed the variation of contact resistance of Au/Ti to Al-doped ZnO thin films with sheet resistance.
This paper demonstrates the integration of Al segregated NiSi/p+-Si S/D contact junction in p-FinFETs for parasitic series resistance reduction. Al is introduced by ion implant into p+ S/D region followed by nickel deposition and silicidation. Drive current enhancement of ~15 % is achieved without any degradation of short channel effects. This is attributed to the lowering of PhiBp of NiSi on p-Si...
To improve the performances of ohmic contacts for GaN devices, a novel multilayer Ti/Al-based metal scheme (Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au) on undoped AlGaN/GaN heterostructures was employed. A contact with ??c (specific contact resistance) of 8.74E-07 ????cm2, Rc of 0.22 ????mm was demonstrated. Ohmic contacts with the novel metal structure were measured with I-V, SEM, HRTEM to show their properties...
In this paper we first demonstrated a micromachined device consisting of two chips to characterize the micro-contact properties, such as contact force, film resistance, constriction resistance, and contact surface roughness. Then, based on our unique circuit routing enabling parasitic resistance on chips to be eliminated, the film thickness, the effective contact area radius, and the Ohmic resistance...
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