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This a outline of a review of metrological issues related to nanoscale electrical transport measurement presented at CPEM-2014. A brief overview of the instrumentation used to measure electrical transport properties at the nanoscale is presented and a few metrological issues are discussed.
A growing number of smart energy meters and electric charging stations have sparked a demand for a high precision, low value shunt resistors to measure the flow of electrical current. This paper investigates the possibility of trimming 100 micro ohms Manganin shunt resistors with tolerance of 5 percent to improve their accuracy and performance for use in smart energy meters. In theory, reducing the...
The work described in this conference talk follows up recent work on the development of a test for lack of field emission orthodoxy. There are three stages of discussion involved. First, the results of applying the test to 17 selected published FN plots are reported. About half fail the test, showing that related published field enhancement factor (FEF) values are unreliable. In several cases, this...
Multilevel resistance switching characteristics of the thin FeOx-transition layer were studies by controlling the maximum current compliance during set process. It is obtained that the LRS is mainly influenced by the compliance current value, which is nearly independent to the HRS. Moreover, statistics of set and reset electrical parameters show that the possible switching process is localized, and...
The paper outlines the manufacturing technology of different silver-metal and silver-metal oxide composite materials to be used in contacts of low-voltage switches. There were conducted tests of the electrical properties of contacts made of eight different composite materials and hard silver. There was determined their resistance to arc erosion and static welding. There were also measured changes...
In this paper, a systematic approach using HfO2, ZrO2 and TiO2 with TiN or Ti/TiN electrode has been conducted to research the best material for ReRAM device integration. From the experimental results and proposed model, the proper electrical properties such as the stability of switching variation, low current and voltage operation, long endurance and retention characteristics are obtained with a...
E-mode GaN FETs fabricated on N-polar GaN have several unique scaling advantages such as vertical scaling of channel with back barrier for better electron confinement and regrowth of the n+ source/drain regions for reduced access resistance. They can also be integrated with recently demonstrated high performance N-polar D-mode devices enabling novel circuit functionalities. Ga-polar E-mode devices...
This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO2 active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are performed using structural and composition analyses. Preliminary electrical investigations outline the non-polar switching behavior of both HfO2 and NiO devices...
In order to eliminate the sensitivity between common eddy current sensor toward the pending-tested materials, this paper measured the resistance and inductive reactance of the Φ5 probe coil through experiments, which covers six types of materials include copper, aluminum, A3 steel, 45# steel, 1Cr18Ni9Ti and DT4 iron. According to fitting processing experimental data, this paper proposed and demonstrated...
LSMO thin films materials have a strong interaction between their electrical and magnetic properties that could be translated into innovative tunable components. The knowledge of the electroactive and magnetoactive properties of these materials is essential for modeling and design of their novel based- devices. The activity of these materials can be described by their electro/magento resistance and...
Tunability is being driven by a number of very interesting enabling technologies. This work demonstrates the feasibility of ferromagnetic thin film tunability at ambient temperature for radio frequency applications. A 400 nm thick LSMO thin film is formed by the chemical solution deposition (CSD) on the top of indium tin oxide (ITO)/SiO2/Si heterostructure. Interdigitated capacitor metallization is...
A giant magnetoresistive (GMR) head in tape recording systems is affected by the electrostatic discharge (ESD) between the sensor and magnetic shields. Pt-doped Al2O3 was developed as a dissipative gap-material to reduce the ESD current. Pt chips were sputtered on an alumina target to vary the film resistance. The decay time of a charged plate on Pt-doped Al2O3 was measured for various film thicknesses...
This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.
In this paper, the temperature dependence of the programmed resistance states in GST-based (GST, Ge2Sb2Te5) phase-change memories is analyzed. Memory cells were programmed over the available current range and were measured at different temperatures. The purpose was to determine a relationship between the temperature behaviour of the cell resistance and the programmed current level. Measurements were...
An on-chip buck converter with 3D chip stacking is proposed and the operation is experimentally verified. The manufactured converter achieves a maximum power efficiency of 62% for an output current of 70mA with a switching frequency of 200MHz and a 2x2mm on-chip LC output filter in 0.35mum CMOS. The use of glass epoxy interposer to increase the maximum power efficiency up to 71.3%, and the power efficiency...
A physical yet analytical phase change memory (PCM) model simultaneously accounting for thermal and electrical conductivities is presented. Due to the physics based nature of the model, the essential temperature from heating and cooling of PCM during operation is instantaneously updated. More importantly, the model can be applied to non-conventional circuit design technique. We show that for the first...
In this paper, the method of Spatial Fourier Transform has been used to investigate the pattern formation dynamics in a dielectric barrier discharge (DBD) system. With this method, patterns formed in the DBD system can be transformed into smooth frequency spectrum. The frequency constitution of discharge pattern can be analyzed. In our experiment mixed gas of 96% Ar and 4% air at 0.9 atm is used as...
Deformation of Bi2Te3-based materials was performed. The source disks with nominal compositions of (Bi0.25Sb0.75)2Te3, (Bi0.25Sb0.75)2(Te0.95Se0.05)3 and (Bi0.90Sb0.10)2(Te0.95Se0.05)3 were cut from the ingots grown by the vertical Bridgman method (VBM). The disks were deformed by either cold press (CP) or pressure current heating (PCH). The crystal structures of the deformed materials were identified...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
The present work aims at studying the cooling performance of a thermoelectric device that integrated with integrated heat spreader (IHS) on a flip-chip plastic ball grid array (FC-PBGA) package. The new thermoelectric device herein is fabricated on the metal substrates by flip-chip assembly process. Thermal performance of the new package was comprehensive studied. The thermal resistances of IHS with/without...
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