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The analysis model of non-woven fabric made of synthetic fibers having different diameters for the non-magnetic noise suppressor is developed and the relationship between the wave impedance of free space is considered. The shielding effectiveness to the plane wave can be calculated using the sheet resistance by regarding the non-woven fabrics as a continuous metal sheet. Therefore, it is shown that...
Nanoionic based resistive switching memory cells are nowadays being implemented in novel memory technology known as Conductive Bridging Random Access Memory. These memory cells, known as programmable metallization cells, are a promising memory technology not only due to their scaling potential but also because of characteristics such as non-volatility, low-power operation and speed. Resistance switching...
In this paper, power-plane and ground-plane characterization on laminate packages and on wafer-level packages are carried out, and the electrical performance, in terms of loop-inductance, power-net isolation, signal-net cross-talk, from the two packaging technologies are compared. Measurement data on test structures is used to correlate the simulation approaches for signal traces with holes in their...
The calculation method of electrical characteristics of the flat transparent antenna with metal triangle in the base is developed. The method is based on the solution of the integral equation for the current along the transparent conductive film. Ways of such antennas optimization are sown.
On the base of the induced electromotive forces method with using the uniform geometrical theory of diffraction fast algorithms and codes for calculating the input impedance and the resonant length of two connected in phase electric dipoles placed above a thin metal rectangular screen at parallel orientation to it and an arbitrary locating of the dipoles from each other are developed. From analysis...
To provide the requested high band-widths for modern communications the combination of optical and wireless links in Radio-over-Fiber systems (RoF), is expected to be an essential part of next generation wireless communication systems. A crucial part of these links is the broadband optical receiver transforming the signal from high optical to millimeter-wave frequencies at each base station. A new...
A fully metallic ink-jet printed passive chipless RFID tag on paper substrate is presented. The tag consists of an ultra-wide-band antenna, a microstrip transmission line with distributed shunt capacitors as information coding element which is reconfigurable by ink-jet printing process. Tapered microstrip line is employed to overcome the limitations of low conductivity and thin film thickness of ink-jet...
This paper focuses on the power delivery network (PDN) characterization of high speed IC; particularly focusing on the on-die decoupling capacitance (Cdie) and on-die resistance and on die metal grid resistance (Rdie+Rgrid) characterization. For accurate modeling of Cdie, Rdie and Rgrid, two different measurements are studied by means of `On-chip' and `On package' measurement. As the `On package'...
Higher operating frequencies and greater power demands have increased the requirements on the power and ground network. Simultaneously, due to the larger current loads, current densities are increasing, making electromigration an important design issue. The optimal wire width for an interdigitated power and ground network is based on the resistive and inductive (both self- and mutual) impedance. In...
The third generation of NXP 0.25 mum SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has fT/fmax of 216/177 GHz and BVcb0 of 5.2 V. The high-voltage NPN has 12 V BVcb0, and fT/fmax of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record |S12| of -60 dB at 10 GHz.
mm-Wave applications claim for accurate and reliable device models for their very high frequency operation range. This is not possible without any representative measurement of the intrinsic device performances especially HF small-signal measurements. In this paper we determine major parasitic contributions of regular HF test structures. Parasitic investigation goes from the probes down to the transistor...
A low cost novel antenna for radiofrequency identification (RFID) tags mountable on metallic surfaces has been proposed and implemented. The proposed antenna indicates not only an easy impedance matching method with various microchip impedances but also the ability to be mounted on metallic surfaces. In this paper, the folded dipole type tag antenna with two parasitism-patches is proposed. This allows...
Current mode (CM) scheme provides suitable alternative for the high speed on-chip interconnect signaling. This paper presents a energy-delay optimization methodology for the current-mode (CM) signaling scheme. Optimization for the CM circuits for on-chip interconnects requires a joint optimization of driver and receiver device sizes, as their parameters which affect the energy-delay performance depend...
In this paper we discuss some aspects of antennas in real designs in SOI technology, and show how the concepts manifest themselves in actual chips, where second-order effects such as resistance and the details of the processing sequence can play an important role. We also discuss the ramifications of a more recent technique which inserts bulk contacts into the SOI design, thereby imposing a bulk-like...
Continuous scaling, necessary for enhanced performance and cost reduction, has pushed existing CMOS materials much closer to their intrinsic reliability limits, forcing reliability engineers to get a better understanding of circuit failure. This requires that designers will have to be very careful with phenomena such as high current densities or voltage overshoots. In addition to the reliability issues,...
The electrostatic discharge (ESD) behavior of shunted GMR heads on a head gimbal assembly (HGA) design is reported. It was found that the shunt offers ESD protection only when the charge from the ESD event is applied very close to the shunt. An explanation is given in terms of the impedance of the wires between the GMR head and shunt at the high frequencies associated with metal contact ESD.
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