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This paper presents a predictive electrostatic capacitance and resistance compact model of multiple gate MOSFET with cylindrical conducting channels, taking into account parasitic effects, quantum confinement and quasi-ballistic effects. The model incorporates the dependence of channel length, gate height and width, gate-to-contact spacing, nanowire size, multiple channels, as well as 1-D ultra-narrow...
In this paper we present the 3D trapezoidal structure for analyzing FinFET MOSFETs using three different mesh regions, one at the top and two in the sidewalls of the fin, which allows the consideration of different carrier mobility at each region due to crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Validation...
A unified drain current model for undoped or lightly doped double-gate (DG) and surrounding-gate (SRG) MOSFETs incorporating velocity saturation effect are presented in this paper. The unified charge-based core model for undoped or lightly doped DG and SRG MOSFETs is presented first. Caughey-Thomas engineering mobility model with exponent factor n=2 is then integrated self-consistently into the unified...
This paper proposed an original approach to the analysis of the threshold voltage metal-oxide-semiconductor structures based on local three-dimensional SOI-structures.
A fully explicit physics-based model for ultrashort undoped (or lightly doped) FinFETs is proposed. In particular, a new physical approach to account for short-channel effects is presented as an extension of the long channel model. The modeling of small geometry effects relies on the accurate description of the potential profile along the channel and in particular on the position of the minimum potential...
We propose an approach to evaluate the effect on threshold voltage variability due to line edge roughness (LER) and to surface roughness (SR) fully based on analytical modeling or supported by a limited number of TCAD simulations to perform parameter sensitivity analysis. We show that in the case of a 32 nm ultra-thin-body SOI MOSFET and a 22 nm double-gate MOSFET our approach is capable to reproduce...
Recently, the industry has focused a great deal on the use of non-planar multi-gate device structures. Many drain current models are available for undoped thin silicon channel double-gate (DG) silicon-on-insulator (SOI) MOSFET, but these models do not take charge coupling effect into account leading to an error of more than 20 percent for silicon channel thicknesses below 30 nm. Hence, we present...
We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The models for current and swing have been verified by comparison with 3-D numerical results for different channel lengths, channel thickness...
A complete surface potential-based current-voltage and capacitance-voltage core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this paper. This model allows the current-voltage (IV) and capacitance-voltage (CV) characteristics to be adequately described by a single set of the equations in terms of the surface potential. The model is valid for all operation regions and...
We present here a new unified analytic model for ballistic and quasi-ballistic transport. Starting from the classical approach of Natori, we enhanced it by taking into account degeneracy and adding consistently an original modelling of short channel effect (SCE) and drain induced barrier lowering (DIBL) by including quantum confinement. Our model has been validated by comparisons with TCAD simulations...
In the present work, a two-dimensional analytical model for novel device architecture, asymmetric gate stack surrounding gate transistor (ASYMGAS SGT) is presented and its effectiveness in suppressing short channel effects and hot carrier effects is investigated. The model is developed by solving the Poisson equation in cylindrical coordinates assuming a parabolic potential profile in the radial direction...
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