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The performance of AlGaN/GaN high-electron mobility transistors that were passivated with AlSiN and SiN and fabricated side by side has been studied. It is found that the AlSiN passivation produced state-of-the-art devices, improving both small- and large-signal performance over the SiN passivation, particularly at higher drain bias. With large-signal excitation at 10 GHz, the effects of second-harmonic...
We report a comparative study on AlInN/GaN HEMTs on SiC substrates having four different processes and epitaxies. The outstanding performances of such devices will be explained thanks to intensive characterizations: pulsed-IV, [S]-parameters and load-pull at several frequencies from S to Ku bands. The measured transistors with 250nm gate lengths from different wafers delivered in cw: 10.8 W/mm with...
This work reports, high electron mobility transistors (HEMTs) using a dilute antimony In0.2Ga0.8AsSb channel, grown by molecular beam epitaxy (MBE) system. Introducing the surfactant-like Sb atoms during growth of the InGaAs/GaAs quantum well (QW) was devised to effectively improve the channel confinement capability and the interfacial quality within the InGaAsSb/GaAs QW heterostructure, resulting...
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