The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Compared with incandescent lamps and fluorescent lamps, nowadays LEDs (Light Emitting Diodes) are power saving, environment-friendly, and have the advantages of long lifetime and flexible color output. Therefore, LEDs are being widely used in many fields. In this paper, three high-power LEDs packaging modules with different packaging structures were selected to do the performance analysis based on...
Ablation was carried out on high voltage Schottky rectifiers at 25°C and -5°C (with a thermoelectric cooler or TEC), at 1.0 W and 3.9 W of laser power. In-situ measurement of the reverse current was conducted and correlated to the device junction temperature. It was found that the usage of a TEC increases the number of laser scans to reach the set current compliance of 100 μA after exposing the die,...
In this paper, a capacitor-less 1T DRAM cell transistor with non-overlap structure and recessed channel is presented. Because of the non-overlap structure between gate and source/drain, GIDL (Gate Induced Drain Leakage) current is efficiently suppressed at hold condition. This results in more than 1 s retention time at 25°C and 100 ms at 85°C.
Hot carrier (HC) reliability of SOI LDMOS suppressing self-heating effect was investigated. We evaluated an appropriate HC degradation by controlling junction temperature (Tj) within the temperature range the circuit is actually operated of. A gate pulse HC evaluation system was used to suppress the self-heating effect during HC stress. Pulse HC stress shows that the drain current shift is three times...
Thinned III-V multi-junction solar cells can realize the advantages of being high-efficiency and light-weight, as such these cells meets the requirement for higher W/kg and W/m3 solar panels. Here we report the development results of a thin-film InGaP/GaAs dual-junction (TF2J) solar cell. In this paper, we study the radiation resistance of the TF2J cells with efficiency of 20-23% under AM0, 1sun at...
This paper aims to determine the maximum frequency achievable in a 25 kW series inverter for induction heating applications and to compare, in hard switching conditions, four fast transistors IGBTs 600 A and 1200 V modules encapsulated in 62 mm from different suppliers. The comparison has been done at 25 and 125degC in a set-up. Important differences between modules have been obtained depending on...
This paper is the first to quantify drain extension leakage in a sub-100-nm gate-length bulk germanium technology. Leakage through the transistor's extension/halo junction is shown to be the dominant leakage component in a scaled transistor layout. Optimizing halo and extension implants to improve short-channel control further increases the extension leakage. As a consequence, drain-to-bulk leakage...
GaInNAs-VCSELs with buried tunnel junction structures are proposed and demonstrated. The maximum output powers of 4.2 mW at 25degC and 2.2 mW at 85degC are achieved with a low resistance of 65 Omega.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.