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In this paper, the potential and the experimental results of high power Schottky barrier diodes on epitaxial diamond films have been presented. Increase of the Schottky barrier height improves reverse operation limit up to 3.1 MV/cm, which value is higher than the Emax of SiC. The reverse leakage current of the diamond SBDs is kept low as 10-4 A/cm2 at 415 K. Low on-resistance with good metal/diamond...
We develop a new analytical model for the junction barrier Schottky (JBS) rectifier and apply it to high-voltage 4H-SiC JBS rectifiers. This model uses a novel method to approximate the electric field at the Schottky contact, which is together with the Fowler-Nordheim tunneling equation to accurately calculate the reverse leakage current of a high-voltage 4H-SiC JBS rectifier. The forward on-resistance...
A novel structure of p+(SiGeC)-n--n+ power diodes is presented in this paper. On the basis of MEDICI, the physical parameter models applicable for SiGeC/Si power diodes are given and the effect on the device characteristics by incorporating smaller-sized carbon atoms substitutionally into SiGe system is simulated and analyzed. Compared to p+(SiGe)-n--n + diodes the new structure not only has the...
A novel structure of p+(SiGeC)-n--n+ power diodes is presented in this paper. On the basis of MEDICI, the physical parameter models applicable for SiGeC/Si power diodes are given and the effect on the device characteristics by incorporating smaller-sized carbon atoms substitutionally into SiGe system is simulated and analyzed. Compared to p+(SiGe)-n--n + diodes the new structure not only has the...
We propose and experimentally demonstrate a novel 1.5kV JBS rectifier structure called LC-JBS rectifier that offers a lower reverse leakage current and faster switching speed. Test devices were fabricated using an epi regrowth technology over implanted p+ buried layer. We have obtained performance trade-offs between forward drop (<1.8V) with reverse leakage characteristics approaching that of PiN...
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