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A 0.1–1.2 GHz power amplifier using 0.18-µm CMOS technology is presented with a small chip area. With 3.3V supply, the measurement results in this band indicated that the gain is better than 20 dB, the S11 and S22 is less than − 18 dB and −10 dB, respectively. The saturated output power is 20.5 dBm and 19.5 dBm at 433 MHz and 900 MHz with the corresponding PAE of 27% and 19.5%, respectively. The chip...
This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain at the upper end of the desired band, a shunt and a series peaking inductors with a resistive feedback at the second stage to obtain the wider and flat gain, while shunt-shunt feedback...
The design of a 3.0-7.5 GHz UWB CMOS power amplifier (PA) for group 1~3 MB-OFDM UWB applications in TSMC 0.18-??m CMOS technology is presented. The UWB PA proposed in this paper uses a current-reused technique to enhance the gain at the upper end of the desired band, and the resistive feedback at the second stage is used to obtain gain flatness. The shunt-shunt feedback is used to enhance bandwidth...
In this paper, A 3.1-10.6 GHz ultra-wideband (UWB) low-voltage low-noise amplifier (LNA) employing only one-stage cascoded topology is presented. The voltage-current feedback is used to enhance the bandwidth. The research is based on the TSMC 0.18 um CMOS processes. A two-section LC resonance configuration is used to arrive at the input and output matching. Measurement results show the following performances:...
A 3.1-10.6 GHz ultra-wideband (UWB) low-voltage low-noise amplifier (LNA) employing only one-stage cascode topology is presented. The voltage-current feedback is used to enhance the bandwidth. The research is based on the TSMC 0.18 mum CMOS processes. A two-section LC resonance configuration is used to arrive at the input and output matching. Measurement results show the following performances: maximum...
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