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The design procedure with the optimum performance of a Low Noise Amplifier (LNA) is presented. The noise performance, Linearity, power dissipation and high gain feature of an LNA have been qualitatively analyzed and finally an optimum LNA design topology has been tried to achieve, among possible common source (C-S) architectures with 0.13μm CMOS process. The design has been targeted on the Bluetooth...
This paper presents a low noise amplifier realized in 40-nm CMOS technology for the 60 GHz ISM band. To reduce the noise contribution from the input passive structure, a new metal slotting method is applied to the transmission line for increasing the effective conducting cross-section area. The design incorporates additional noise matching between the common-source stage and the common-gate stage...
Miniaturizing chip circuits in IC design is one of chief targets to promote chip production. However, accompanying the parasitic capacitance perhaps degrades the circuit performance. Here, a cascode low-noise amplifier (LNA) circuit incorporating parasitic capacitance of passive inductors was designed at 2.4GHz carrier frequency with low-cost and high-integration 0.18μm CMOS process. The Advanced...
This paper presents a novel power-constrained algorithmic design methodology for radiofrequency (RF) low-noise amplifiers (LNAs). The methodology is based on matrix descriptions of the transistors allowing for the first time the derivation of exact synthesis equations for input impedance matching and transducer gain optimization. The equations are embedded in an algorithm for design tradeoffs between...
This paper contains the development and verification of low noise amplifier stages (LNA) within the framework of a front-end for digital satellite radio diversity receiver operating around 2.3 GHz. First, a low noise high gain LNA is developed to reach the high requirements of satellite radio reception. Therefore a single-ended cascode architecture is chosen. The simulated noise figure is 0.58 dB...
In this paper, a three-stage cascode LNA and a three-stage common source LNA are presented. A comparison in terms of noise figure and gain between the two designed three-stage MMIC common source and cascode LNAs is discussed. This LNAs will be used as a part of a WPAN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz.
This paper presents a V-band Low Noise Amplifier (LNA) that uses a cascode configuration. This LNA will be used as a part of a WPAN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. This low noise amplifier is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic...
A two-stage Ultra-Wide-Band (UWB) CMOS low noise amplifier (LNA) employing RC feedback on conventional cascode inductive source degeneration structure is presented in this paper. The proposed LNA is designed using 0.18 μm radio frequency (RF) CMOS technology for a 3 to 5 GHz ultra-wide-band system. By careful optimization, an RC feedback circuit acts as a current reused topology, while second stage...
An operation in 1.8V supply voltage single-ended cascode low-noise amplifier (LNA) structure was launched. This designed circuit provided the lower noise figure and matched the suitable LC tank to enhance the central operating frequency as well as the excellent input and output impedance matching incorporated into this LNA circuit. In this simulation, the Agilent ADS (Advanced Design System) simulation...
A GaN high electron mobility transistor technology with a gate length of 0.25 µm has been used to design and fabricate a cascode broadband low noise amplifier (LNA). The two-stage monolithic microwave integrated circuit (MMIC) with feedback topology yields a bandwidth of 0.5–3 GHz at a constant gain of 35 dB and noise figures of less than 1.5 dB. A third order intercept point (OIP3) of up to 42.5...
A GaN high electron mobility transistor technology with a gate length of 0.25 µm has been used to design and fabricate a cascode broadband low noise amplifier (LNA). The two-stage monolithic microwave integrated circuit (MMIC) with feedback topology yields a bandwidth of 0.5–3 GHz at a constant gain of 35 dB and noise figures of less than 1.5 dB. A third order intercept point (OIP3) of up to 42.5...
This paper presents the comparison in terms of noise figure between common source and cascode LNAs. The classic MOS noise model is used to derive an expression for the noise figure of the cascode topology and to compare it with the noise figure of the common source topology. As an experimental proof, fully integrated 60 GHz low noise amplifiers have been designed, fabricated and measured in a 90 nm...
This paper presents a dual-stage LNA design which is enhanced for gain, linearity and noise figure under a certain power constraint. The LNA benefits from an inductively-degenerated cascode amplifier in the first stage which is followed by a common-source amplifier as the second stage. Two techniques are used to improve the linearity of this 24-dB gain LNA while maintaining the noise figure equal...
In this paper, a Q-band low noise amplifier (LNA) is designed using in 90-nm low power (LP) CMOS. This LNA achieves a high gain and low noise. Besides, a transformer is placed between the cascode devices to reduce the noise figure and enhance the stability, as well as also bandwidth. The LNA features a maximum small signal gain of 13.8 dB and a minimum noise figure of 3.8 dB at 37 GHz, with a power...
A distortion-cancelling bias scheme is presented that improves the linearity of RF amplifiers connected in cascode topology. The bias method involves stacking one bias circuit on top another bias circuit so that the same current flows through the bias circuit. In this way, the nonlinearity of the gain and cascode amplifying devices can be cancelled out by the dynamic variations of the currents and...
This work presents a low noise amplifier (LNA) and mixer for 1558-1578 MHz Global Position System (GPS). The LNA uses cascode structure to eliminate the Miller effect. Also the next stage, the double-balanced Gilbert cell mixer is accomplished for good performance such as isolation. We suggest a Single-Differential LNA mode which has enough gain and two differential outputs. The LNA and Mixer are...
In this paper, we present the design of a low noise amplifier (LNA) for WiMAX (802.16e) standard with TSMC 0.18 ??m RF CMOS process. This circuit, we designed a fully integrated 2 - 6 GHz two stages LNA structures, we employed the resistive shunt-feedback, simplified band-pass filter circuit to achieve wide input impedance matching. In addition, the gain stage amplifier adopts cascode structure to...
In this paper, a low power low-noise amplifier (LNA) using inductor-coupling resonated technique is designed for ultra-wideband (UWB) wireless system. The design consists of a wideband input impedance matching network, one stage cascode amplifier with inductor-coupling resonated load, and an output buffer; it was fabricated in TSMC 0.18 um standard RF CMOS process. The UWB LNA gives 10.8 dB power...
In this paper, A 3.1-10.6 GHz ultra-wideband (UWB) low-voltage low-noise amplifier (LNA) employing only one-stage cascoded topology is presented. The voltage-current feedback is used to enhance the bandwidth. The research is based on the TSMC 0.18 um CMOS processes. A two-section LC resonance configuration is used to arrive at the input and output matching. Measurement results show the following performances:...
A 3.1-10.6 GHz ultra-wideband (UWB) low-voltage low-noise amplifier (LNA) employing only one-stage cascode topology is presented. The voltage-current feedback is used to enhance the bandwidth. The research is based on the TSMC 0.18 mum CMOS processes. A two-section LC resonance configuration is used to arrive at the input and output matching. Measurement results show the following performances: maximum...
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