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We report on the small-signal and power performance of AlGaN/GaN RF switches with novel gate design incorporating regular metal gate deposited over a “slow” gate electrode formed by a low-conducting InGaN film. SPDT RF switch MMICs using hybrid “fast/slow” gate AlGaN/GaN MOSHFETs show superior transmission characteristics while maintaining the same high-power and high-linearity performance as the...
This paper describes a novel AlInN/InN heterojunction field effect transistor (HFET) without and with an oxide layer for high performance. A charge control model based on the self-consistent solution of one dimensional Schrodinger-Poisson equations is developed. The model takes into account the highly dominant spontaneous and piezoelectric polarization effects to predict the two dimensional electron...
The AlGaN/GaN heterostructure without oxide (HFET) and with additional aluminium oxide underneath the gate (MOSHFET) were investigated with regards to RF performance. Both cutoff frequency and maximum frequency of oscillation were measured and compared by means of small signal analyses and equivalent circuit parameter extraction. The maximum oscillation frequency fmax is an important figure of merit...
Thermal annealing was used to investigate traps at the surface of AlGaN/GaN HFETs and Al2O3/AIGaN/GaN MOSHFETs. The C-V and static output and transfer measurement yielded nearly identical characteristics for unannealed and annealed structures, regardless whether unpassivated or gate-oxide structures were used. A strong influence of the annealing on the gate leakage current was observed. The leakage...
The performance of novel RF switching devices using insulating gate III-nitride metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) is demontrated. Initial results show that there is no degradation in the transmitted powers or gate leakage current during the 200+ hours stress with +30 dBm CW input powers. Multi-gate RF switching devices that increase the isolation in the...
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