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Landau quantization due to strong magnetic fields is simulated for (110) Si hole inversion layers. The simulations are based on the self-consistent solution of the 6×6 K⃗·p⃗ Schrodinger equation (SE) and Poisson equation (PE). A new method to solve the 2D K·p SE is presented. The new simulations take into account Landau quantization, Zeeman spin splitting and size quantization at the same time. Oscillations...
In order to simplify the numerical investigation of carrier transport in nanodevices without jeopardizing the rigor of a full quantum mechanical treatment, we have exploited an existing variational principle to solve self-consistently Poisson's equation and Schrödinger's equation as well as an appropriate transport equation within the scope of the generalized local density approximation (GLDA). In...
A global continuous channel potential solution is proposed for the modeling of symmetric double-gate (DG) MOSFETs. To obtain the channel potential, from accumulation to inversion regions, 1-D Poissonpsilas equation in the silicon film of the DG MOSFETs is solved physically. The extensive comparisons between the calculated results and numerical simulations illustrate that the analytical solution is...
A non-charge-sheet surface-potential-based compact drain-current model for long-channel undoped gate-all-around (GAA) silicon-nanowire (SiNW) MOSFETs is developed. The surface-potential equation is derived from cylindrical Poisson equation for undoped silicon and solved iteratively with a very good initial guess to reach equation residue below 10-16 V within a few iterations. The single-piece current...
A simple analytical expression of the 2-D potential distribution along the channel of silicon symmetrical double-gate (DG) MOSFETs in weak inversion is derived. The analytical solution of the potential distribution is compared with the numerical solution of the 2-D Poisson's equation in terms of the channel length L, the silicon thickness tSi, and the gate oxide thickness tOX. The obtained results...
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