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Continuous miniaturization of semiconductor devices has been the main driver behind the outstanding increase of speed and performance of integrated circuits. In addition to a harmful active power penalty, small device dimensions result in rapidly rising leakages and fast growing stand-by power. The critical high power consumption becomes incompatible with the global demands to sustain and accelerate...
Graphene is a carbon allotrope in which the atoms are arranged in a two-dimensional honeycomb lattice, which comprises two hexagonal sublattices. The existence of these two sublattices gives rise to the electron pseudospin and, along with the overlapping pz orbitals, to the absence of back-scattering, which give to graphene high-quality transport properties. Graphene is a gapless material and currents...
In this paper an advanced form of vector-list called quaternary-vector-list QVL is introduced. QVL is the computational representation of Boolean function or switching function respectively and enables the total computational treatment of switching algebraic tasks. It has advantages in terms of memory usage, simplicity, clarity and also in computation time. Furthermore, important operations as complement,...
High quality voltage and current are required when PV generator is connected to grid utility. To this, multilevel inverters are very desirable to be used as connection interface. To keep the cost of the whole system as low as possible, a cost-effective control device using STM32F4 discovery board is employed to control three-level inverter that can be used in grid-tied PV system. The paper develops...
This paper presents a measurement setup for pulsed RF characterization of a buck-converter-based envelope tracking (ET) system. In contrast to continuous wave (CW) measurements, the proposed method allows ET system characterization over its full dynamic range without exceeding the power dissipation safe operating area. It includes the dynamic characterization of the individual subsystems, i.e., the...
Wide band gap power semiconductor devices are now replacing the Si-MOSFET or IGBT. GaN-HEMT achieves the reduction in size and weight, thanks to its high frequency switching behavior. However, its high-speed switching characteristics and low threshold voltage may cause a false turn-on phenomenon, which is a fatal effect for the applications. It is urgent issue to tackle and avoid this problem by modifying...
This paper presents an experimental switching behaviour comparison of GaN HEMT and SiC MOSFET against their Si competitors, the Si SJ MOSFET and high speed Si IGBT, in the 650 V class. The devices are first compared using their respective datasheets. The test circuit is introduced and hard switching tests under inductive load are performed to reveal the switching performance of the devices. The differences...
This paper covers characterization and gate drive design for high voltage, gallium nitride (GaN), high electron-mobility transistors (HEMT) in a cascode structure. Parameters of high voltage cascode GaN HEMT devices are described and compared to state-of-the-art Si MOSFET devices. Challenges in designing high frequency GaN based power converter and common design practices are described. Effects of...
Lateral GaN-on-Si HEMT technology enables integrated high-voltage half-bridges with gate drivers. However, the capacitive coupling through a common conductive substrate influences switching characteristics. The measured hard-switching turn-on time with floating substrate increased to over 16 ns as compared to conventional source-connected substrate (1 ns), switching 300 V/4A with GaN ICs comprising...
Following the recent advances in the production of 3.3 kV and 10 kV SiC power MOSFETs, Wolfspeed launched an effort to develop a new generation 6.5 kV SiC power MOSFET to fill the medium-to high-voltage fast switching device void in applications such as rail traction and mediumvoltage motor drives. The characteristics of the new generation 6.5 kV SiC power MOSFET rated at a drain current of 30 A,...
This paper presents an evaluation of a newly released power stage direct drive GaN HEMT. The double pulse test is performed and the dynamic performance is characterized. PCB layout optimization is also investigated for improved switching transients. It is shown that the direct drive system provides simplified circuit design, reduced number of external components, and small gate loop parasitics. Also,...
This work presents the operation of a PCB-embedded diode-clamped multilevel-converter integrated circuit (IC) fabricated in a lateral, high-voltage AlGaN/GaN-on-Si heterojunction technology. It is demonstrated, that PCB-embedding is an appropriate assembly technique for lateral power ICs with high-integration levels. By placing DC-link capacitors onto the IC-package, parasitc inductances in the power...
The goal of this work is to develop a real time degradation monitoring tool for Silicon Carbide (SiC) power MOSFETs. The conventional methods for prognosis and reliability monitoring are mostly based on parametric measurements as on state resistance, threshold voltage, leakage currents etc. The change in switching characteristics of aged devices and the root cause analysis behind this change are also...
With fast growth of data centers and automotive electronics, DC-DC converters are the crucial modules, which deliver power to these systems. High conversion ratio (HCR) step down DC-DC converters are gaining growing attention for usage in these high tech emerging applications. The main design challenge of these converters is maximizing conversion ratio, efficiency, and power density simultaneously...
This paper presents a clock-feedthrough compensation technique for bootstrapped switches. The proposed technique utilizes a dummy transistor to generate a reverse voltage, which compensates the input-dependent error caused by clock feedthrough effect of sampling switch. Simulation result shows the differential sampling error of bootstrapped switch reduces from 7.2mV to 1.4mV for the worst case, operating...
Three GaN-based buck switching power stage architectures are implemented using discrete GaN High Electron Mobility (HEMTs) devices and compared with respect to efficiency, switching speed (2 to 10MHz), and power conversion ratio for medium-power applications. The three presented power stage architectures are: a single-stage buck, a multi-phase buck with 2 phases, and a stacked interleaved configuration...
This paper presents the project procedure to develop a Half-Bridge (HB) Non-Isolated DC-DC converter applying a Normally-On GaN-based switch. Normally-on devices (D-mode) present the benefit of lower costs in terms of production if compared with E-mode devices, which gives an economic motivation to study and develop power electronics converters applying this technology. The devices under test (DUTs)...
This paper introduces a dead-time optimization technique for a 2-level voltage source converter (VSC) using turn-off transition monitoring. Dead-time in a VSC impacts power quality, reliability, and efficiency. Silicon carbide (SiC) based VSCs are more sensitive to dead-time from increased reverse conduction losses and turn-off time variability with operating conditions and load characteristics. An...
SiC power devices exhibit low on-resistance and are capable of processing high switching frequencies at elevated temperatures. When SiC MOSFETs are employed as switch, minimizing switching power losses is crucial. A proper design of gate driving circuit for SiC MOSFET can ensure minimum losses, safe operation of the device and reliable performance. A comparative study of gate drivers for SiC MOSFETs...
This paper reports on the design and experimental verification of a 200 kVA traction inverter using three 900 V, 2.5 mΩ, SiC MOSFET-based half-bridge power modules comprising the power stage. Each dual power module contains four 900 V, 10 mΩ SiC MOSFETs per switch position and uses synchronous conduction to achieve high average and peak efficiencies over its entire operating region to meet the demands...
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