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Compared with other wide bandgap materials, silicon carbide (SiC) possesses the significant advantage of an SiO2 native oxide. However, both thermally grown and deposited oxides on SiC suffer from poor interface quality, and thus both require post deposition anneals in nitric oxide (NO) to obtain usable MOS devices [1], [2]. We report an alternate approach where a passivated, disorder free oxide-SiC...
The goal of this work is to develop a real time degradation monitoring tool for Silicon Carbide (SiC) power MOSFETs. The conventional methods for prognosis and reliability monitoring are mostly based on parametric measurements as on state resistance, threshold voltage, leakage currents etc. The change in switching characteristics of aged devices and the root cause analysis behind this change are also...
In this paper, the degradation at the gate oxide layer of a SiC MOSFET has been studied. The online condition monitoring was achieved by Spread Spectrum Time Domain Reflectometry (SSTDR) for the first time in SiC based devices. An accelerated aging station was built to age the power semiconductor devices in a standardized way, and power cycling test was performed to induce degradation. Finally, the...
Based on the parabolic potential approach (PPA) and equivalent number of gates (ENG), a new quasi-3-D subthreshold current/swing model for the fully depleted quadruple-Gate (FDQG) MOSFET is developed. The model explicitly shows how the channel length, gate oxide thickness, and silicon film thickness affect the subthreshold current/swing behavior. The model is verified by its calculated results matching...
The work reports on an innovative design to improve the scalability of misaligned Double Gate (DG) Tunnel Field Effect Transistor (TFET) for operation as dynamic memory. The design optimization is achieved through use of lateral gap on both edges of back gate (G2) that reduces Band-to-Band Tunneling (BTBT) and enhances Retention Time (RT) by a factor of ∼3. The front gate responsible for read mechanism...
Two hybrid memristor-MOS exclusive OR (XOR) and exclusive NOR (XNOR) logic gates based on Memristor Ratioed Logic (MRL) are presented. The proposed gates present logic states with voltages, and implement the logic operation within one clock cycle. The designs ease the voltage degradation problem of the original MRL logic gates, while consuming fewer area overhead and less delay than their counterparts.
Bidirectional dc-dc converter is an important part of battery energy storage to efficiently control the power flow in or out of the battery. Due to the limited stored energy, it is very important to maximize the amount of deliverable energy to the load by minimizing the losses in the power conversion. In this paper, the proposed high efficiency bidirectional DC-DC converter is based on series resonant...
Since large array devices of MOSFETs are huge for driving capabilities, ESD self protections are also required. Then, the large drain-contact-to-poly-gate-spacing layout rule is usually adopted with large layout areas. In this paper, a new control circuit is implemented for adopting the minimum device layout rule in the LAD. Hence, it results in a very small layout area and ESD self-protection capabilities...
We report on the gate misalignment induced asymmetry to enhance the impact ionization in Germanium (Ge) Junctionless (JL) devices by localizing the carrier depletion to a narrow region of the semiconductor film. Results show that misaligned Ge JL MOSFET can exhibit higher values of impact ionization power per unit volume which leads to a sharp current transition with nearly an ideal Subthreshold swing...
SiC power devices exhibit low on-resistance and are capable of processing high switching frequencies at elevated temperatures. When SiC MOSFETs are employed as switch, minimizing switching power losses is crucial. A proper design of gate driving circuit for SiC MOSFET can ensure minimum losses, safe operation of the device and reliable performance. A comparative study of gate drivers for SiC MOSFETs...
This paper reports on the design and experimental verification of a 200 kVA traction inverter using three 900 V, 2.5 mΩ, SiC MOSFET-based half-bridge power modules comprising the power stage. Each dual power module contains four 900 V, 10 mΩ SiC MOSFETs per switch position and uses synchronous conduction to achieve high average and peak efficiencies over its entire operating region to meet the demands...
An improved SiC MOSFET-gate driver integrated half-bridge module with folded layout using direct bonded copper (DBC) substrate is designed, fabricated, and tested. The bottom layer of the DBC is used as part of the power loop to achieve major reduction in the loop stray inductance. Due to the low parasitic inductance and capacitance, the gate resistor is chosen as zero to reduce the switching loss...
The influence of different short circuit (SC) test conditions, including bias voltages and case temperature, on the degradation of Silicon Carbide (SiC) MOSFETs performance is investigated. Sentaurus TCAD is utilized with the trap degradation model included in the simulations to assess the density of hot holes trapped in the gate oxide during this procedure. Simulation results demonstrate that higher...
The superior electrical and thermal properties of silicon carbide (SiC), when compared to silicon (Si), has lead to it being used in power converter designs that require high efficiency and low volume. However while choosing the semi-conductor material for these high performance designs is relatively simple, the specific type of SiC device (e.g. JFET, MOSFET or BJT) is not so straight-forward. This...
Parasitic capacitances of silicon carbide (SiC) MOSFET exert an significant influence on the switching performance with direct determination of the switching speed, switching loss and EMI noises, among which the nonlinear gate drain capacitance (Miller capacitance) dominates due to the well-known Miller effect. A precise and comprehensive model of the miller capacitance is proposed according to the...
The future electricity grid for the electric power distribution network is slowly moving in the direction of dc transmission. In order to prevent the fault propagation, provide protection against overload and fault, and isolate the faulty load in a dc power network, an overcurrent protection device must be applied to the switch gear for electric power management and control of the systems in dc power...
In recent years, most electronic devices are miniaturized because the technique on integrated circuits has been developing. Switching power supplies become small-sized by using high switching frequency to decrease the size of reactance components. The resonant converters are useful because of the low switching loss in semiconductor switches. LC oscillators are suitable for VHF gate driver in resonant...
We have demonstrated 1200V and 3300V planar 4H-SiC MOSFET technology at our 6-inch foundry. 1200V MOSFETs demonstrate good avalanche ruggedness under single-and one million (1,000,000) repetitive unclamped inductive switching (UIS) pulse tests. 1200V MOSFETs can pass one hundred (100) 10 microsecond short-circuit events at 600V bus voltage, while 3300V MOSFETs can pass 5 microsecond short-circuit...
Gallium Nitride (GaN) based devices on Silicon (Si) substrates (GaN-on-Si) promise unmatched performance at low cost. Despite this theoretical promise, the lattice and thermal conductivity mismatch between the GaN and Si has obstructed the realization of reliable electrically graded high voltage devices. Recently, a small number of manufacturers have claimed the successful development of such devices...
In this paper, key aspects of silicon-carbide (SiC)-based automotive traction drives are reviewed. Firstly, the required supporting factors to achieve optimal operating conditions and best performance are described. Major component sizing methodologies and constraints are included. Expectations on gate threshold voltage, trans-conductance, and transient oscillation are discussed. Tolerance against...
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