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Microsystem technology based on micro machining technology and integrated circuit technology has the advantages of miniaturization, integration, intelligence, low cost, high performance, mass production and so on. An overview of the composition and working principle of the microsystem, it introduces the development history of micro system technology, current situation and industrial distribution pattern,...
2.1D package technology (chip on substrate) as a potential low cost solution for 2.5D silicon interposer package (chip on wafer on substrate), we develop here a panel type manufacture organic interposer (scheme 1). 2.1D technology focus on the production cost and the ball count range which defined by line/space. We presents the demonstration of high resolution photolithography semi-additive processes...
On the benefit of the deeply development of MEMS and inertial instrument technology, the novel micro technology for positioning, navigation and timing (μΡΝΤ) becomes the substitution of GPS technology, and is the one of the most popular research area. The μ PNT unit volume can be pressed obviously by employing 3D stack technology after MEMS components are finished, and through silicon vias (TSV) technology...
We present a simple device architecture enabled by an effective fabrication process to realize high-Q, ultra-compact microresonators with large free spectral ranges on silicon nitride at visible wavelengths. We demonstrate Qs >60 K for microdisks with radii as small as 2.5 μm.
The MEMS (Micro-Electro-Mechanical Systems) acronym recalls mechanical structures of micrometric dimensions performing a well-controlled electronically preset function. The real sense of a microelectromechanical system (MEMS) is the interaction of electronic circuits with the mechanical transducers (microstructures) to perform a useful function. However, the MEMS-microstructures require a wide range...
In this paper we propose a modified fabrication process to finely define the region surrounding the resonator that undergoes Si etching in CMRs. The unpredictable undercut has been shown to lead to Q instability within microns' variation. High aspect ratio SiO2 trenches were used as barrier to confine the release area. Thanks to the high selectivity of SF6 over SiO2, long Si etch steps can be performed...
In this paper we propose a modified fabrication process to finely define the region surrounding the resonator that undergoes Si etching in CMRs. The unpredictable undercut has been shown to lead to Q instability within microns' variation. High aspect ratio SiO2 trenches were used as barrier to confine the release area. Thanks to the high selectivity of SF6 over SiO2, long Si etch steps can be performed...
This paper reports square silicon nanopore filtration membrane fabrication on <100>-oriented silicon substrate by employing potassium hydroxide (KOH) + isopropyl alcohol (IPA) wet etching. The aim of the study is to get a smooth membrane surface as the nanopore patterning base. A constant heated temperature of 80 °C employing double boil technique is used in both buffer oxide etching (BOE) and...
Via last TSV (through silicon via) technology is more and more applied in 3D WLCSP, which can decrease package volume and increase I/O density. The process of via last includes temporary bonding, grinding, photolithograph, silicon etching, SiO2 etching, CVD, PVD, plating and so on. Silicon etching and SiO2 etching are important process of via last TSV package for interconnect technology. Temporary...
We report deep reactive ion etching of silicon gratings via cryogenic and Bosch processes. An aspect ratio of > 50 is achieved for 400 nm period gratings with both processes.
Ion implantation is the most important silicon doping method in the process of semiconductor manufacturing. The common used analysis methodology such as FIB/SEM/TEM is restricted in analyzing the ion implantation related defects, while the chemical stain technology can provide very essential data in ion implantation process. The etching mechanism of silicon is very complicated with the mixture of...
We have developed a new method to quantitatively evaluate the detectability for voids in bonded wafers by using ultrasonic inspection. The test sample for evaluation consists of bonded two Si wafers and has artificial voids between the wafers. The depths of these artificial voids are 5, 10, 20, and 170 nm. In this study, the evaluation was made by obtaining the images of artificial voids by using...
For the realization of a miniaturized field emission electron source we tested benzocyclobutene (BCB) as a new spacer material between cathode and anode. We fabricated black silicon emitters and characterized the emission behavior with an integrated 5 μm thin and large-area spacer of BCB. The integrated BCB layer allows the realization of a compact electron source with only two components consisting...
A two dimensional (2D) length-extensional mode quartz micro-resonator has been designed and patented by ONERA. Thanks to a specific decoupling, this resonator is expected to show a very high Quality factor×Frequency product (Q.f) near the theoretical limit of 3.1013. This design offers a range of frequencies between 1 MHz up to 10 MHz, thanks to homothetic geometries with thickness ranging from 210...
This paper reviews our recent work on DNA-based nanofabrication. DNA nanostructures were used as a template to initiate direct pattern transfers to a diverse range of substrates, including oxides, polymers, and self-assembled monolayers. Complex patterns were obtained in many cases with a lateral resolution down to sub-10 nm demonstrated in some cases. These results highlight the potential of DNA...
This paper describes the design, fabrication and characterization of an in-plane positioning system within a thick (16 micrometers) silicon dioxide photonic-material stack. This is part of a proposed novel photonic alignment scheme, targeting at highly-automated assembly and high-precision alignment of multi-port photonic chips. Creating such functionality in thick silicon dioxide is challenging because...
Light trapping strategies that lead to an enhancement of the light absorbed by a device is a direct way to improve solar cells behavior. Light trapping strategies that lead to an enhancement of the light absorbed by a device is a direct way to improve solar cells behavior. The texturization of one or more surfaces is an industry standard in solar cells manufacturing. In the particular case of crystalline-...
Ion implantation and plasma etching are essential process steps for manufacturing semiconductor devices. The damage created by those process steps degrades device characteristics and reliability. Therefore, it is necessary to minimize the damage. The damage structure created by ion implantation is reconstructed during an annealing step, and p-n junction is formed as designed in advance. On the other...
We present our experimental results of ultra efficient (up to 2.16 nm/mW) thermally tunable modulators with n-type heaters and the Si substrate removed. To our knowledge, this is the most efficient thermally tunable modulator demonstrated at 1550nm to date. We include results of externally heated modulators with commensurate performance enhancements through substrate removal.
In this work, the development of engineered silicon substrates for a novel via-middle TSV integration concept is demonstrated. These substrates include 3D buried etch-stop layers which provide both an ideal vertical and lateral etch-stop for TSV trench etching thus enabling the simultaneous realization of different size of TSVs on the same silicon substrate. Beside standard BiCMOS and TSV fabrication...
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