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As chip makers move to advanced nodes and device geometries shrink, design and production costs have risen rapidly. As a result, it has become increasingly critical to reduce costs in established technology nodes by increasing device yield. For a given process, differences in individual process chambers can lead to process variations that may have a large impact on both overlay control and yield management...
The main objective of this study was to identify if there is any change in wafer warpage after bevel clean process, which might lead to higher film stress at device area in further processes. Correlation between bevel film Etch Rate (ER) and wafer warpage was also investigated. 25 kA thermal oxides (Tox) were etched on back side with various thicknesses remaining to generate a different amount of...
The improvement of device performance associated with the intentional manipulation of stresses on the transistor scale is an integral part of device fabrication at advanced technology nodes. However, comparatively little attention is given to stress management at within-die and within-wafer length scales. Process variations that occur on these longer length scales can induce significant within-wafer...
For several decades, the output from semiconductor manufacturers has been high volume products with process optimisation being continued throughout the lifetime of the product to ensure a satisfactory yield. However, product lifetimes are continually shrinking to keep pace with market demands. Furthermore there is an increase in dasiafoundrypsila business where product volumes are low; consequently...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
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