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The Advent of Internet-of-Things (IoT) paradigm has brought exciting opportunities to solve many real-world problems. IoT in industries is poised to play an important role not only to increase productivity and efficiency but also to improve customer experiences. Two main challenges that are of particular interest to industry include: handling device heterogeneity and getting contextual information...
In this paper, we present the modeling of source/drain access resistances in the surface potential based model named “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. From TCAD simulation, it is shown that nonlinear source and drain resistances increase with drain current which is due to the saturation of electron velocity in this region. Accurate modeling...
We study p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) using the direct-current-current-voltage (DCIV) method before and after bias temperature stress. The stress is varied over a wide range of temperatures using our polyheater technology. The ability of the SRH model and a multistate non-radiative multiphonon (NMP) model to meaningfully reproduce the acquired DCIV data is compared...
Analog circuit designs are often biased to work in sub-threshold mode for low power constraints and for better gate-source voltage matching performances. Depending on process, hump effect may change MOS characteristics for negative Bulk-Source Voltage (VBS) and have a slight impact for VBS=0V. Actually, even without body effect, hump mainly degrades MOS matching performances in the sub-threshold area...
Every application of a Wireless Sensor Network (WSN) requires the data collected from sensor nodes to be reachable from the outside, in order to allow its processing and to obtain information from the monitored phenomena. Environmental protection and agriculture are examples of areas most likely to benefit from the deployment of WSNs. Devices equipped with temperature, humidity and light sensors could...
Negative Bias Temperature Instability (NBTI) is frequently suspected to arise from a delicate interplay between some sort of hole trapping and an interface generation mechanism. In a recently suggested model the E' center along with its second form as an Si - Si dimer are supposed to play a key role. Despite of its successful application to a large amount of experimental data, this model relies on...
A scaled, undoped, thin-BOX, planar FBC technology is demonstrated for the first time, featuring 10-nm BOX, 25-nm SOI, high-k, metal gate, separate back-gate (BG) doping, and raised source-drain epitaxy. Retention of a minimum 3-muA sensing window for 100 ms, in devices with 60-nm gate-length (Lg) and 70-nm diffusion width (W), represents the best retention time of all sub-100-nm FBC devices. FBC...
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