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Scaling issues in thermal behavior of silicon MOSFETs have been discussed for devices with typically larger than 100 nm. Cutting edge technologies of silicon devices are exploring the issues in deep nanometer length scales, where it is claimed that the conventional Fourier-based thermal model does not apply. It is also claimed that the BTE-based transport model is the theoretical tool to discuss the...
Two dimensional numerical model of Si-NMOSFET with 0.2 μm gate length is proposed to investigate the effect of heat transfert on the transistor characteristics using comsol simulator. In addition to coupling Poisson and drift diffusion equations, the heat conduction equation is introduced in the numerical model. Temperature distribution due to the heat conduction is investigated. Simulation results...
Using a coupled Monte Carlo method for solving both electron and phonon Boltzmann transport equations, the transient electrothermal behaviors of nanoscale Si n-i-n device are simulated. The nonequilibrium optical phonon distribution is characterized by a temperature different from that of the acoustic phonons, and these two temperatures show different characteristics not only in the steady state,...
In this paper the silicon micromachined heat flux sensor is present. A thermal resistance of the sensor is defined by simple model and finite element model. Temperature distribution inside heat flux sensor is received. Modeling results is compared with experimental data.
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