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The design and characterization of a robust pulse generator power-on reset circuit, with accurate bandgap based thresholds, brown-out event detection capability and hysteresis, realized in 0.25 µm SiGe BiCMOS technology is presented. The resulting circuit consumes 7.5 µA and occupies 360×440nm2 area. Measured reset pulses longer than 340 µs are generated. The design was simulated with a voltage and...
Armchair Graphene nanoribbons (A-GNRs) are widely used because of their semiconducting electronic properties in nano-sized transistor. One of the important electronic properties of A-GNR based device is capacitance formed in channel and another one is gate delay. The classical capacitance which is only determined by device geometry gives linear response. But when device is turn on and controlled by...
Graphene nanoribbons (GNRs) are considered as a prospective material for the next generation of nanoelectroic devices. One of the important properties of GNRs in determining the performance of such devices is capacitance; in particular, the quantum capacitance when the device size approaches in the scale of nanometer. This work presents a comprehensive investigation of the bandgap structure and the...
Graphene nanoribbon(GNR) provides a considerable band gap in graphene based nanodevice. In the issue of opening a band gap, the edge effect plays an important role for realizing the practical bandgap energy. Quantum capacitance is one of the most significant parameters which controls the device speed is also influenced by edge effect. In this paper we will observe bandgap for edge effect in energy...
GNR (Graphene NanoRibbon) Tunneling-FETs (GNR-TFETs) are simulated using a Non-Equilibrium Green's Function (NEGF) approach using Extended Hiickel Theory (EHT)-based Hamiltonian. By comparing performance of ribbons with different bandgaps, it is shown that reducing source/drain doping and operating voltage enables low voltage operation of GNR-TFETs with a bandgap of down to 0.5eV, while still keeping...
During the last five years, the new material graphene has gained increasing attention in the device community. The progress in the development of graphene transistors is breathtaking and graphene-based devices are now considered as an option for a post-Si electronics. However, to realistically assess the potential of graphene, the existing problems with graphene and the options to solve them have...
Temperature and length scaling dependence of double gate tunnel FET has been analyzed considering the electric field of junction depletion region. In the ballistic limit Id has been found to be dominated by effective mass and insulator dielectric constant rather than bandgap. Hence, GaAs channel TFET has identified as higher current device than Si counterpart due to lower effective mass. However,...
In this paper a low voltage RC oscillator for standard RFID applications and local positioning is presented. Its bias current is provided by a current-mode bandgap whose reference voltage can also be used for enhanced transponder applications like sensing. The chip is designed in a 0.13 ??m CMOS technology with p substrate. It was developed at the Institute for Electronics Engineering within the scope...
The tunnel field-effect transistor (TFET) is a promising candidate for the succession of the MOSFET at nanometer dimensions. In general, the TFET current can be decomposed into two components referred to as point tunneling and line tunneling. In this paper we derive a compact analytical model for the current due to point tunneling complementing the previously derived analytical model for line tunneling...
Building on previous work, we discuss a diffusion-drift description of electron and hole transport in both single and multi-layer graphene that includes the possibility of a small bandgap. To illustrate the theory, the effects of these new features on field-effect device characteristics are exhibited.
This paper presents simulations on tunnel field-effect transistors (TFET) and comparisons carefully to assess their impact at the same supply voltage. Current-voltage characteristics are simulated for n and p TFETs with different channel materials:Si,Ge,InGaAs, and InAs. Results show that InAs has the highest current for its smallest bandgap and effective mass, but it can not meet the off-state leakage...
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