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Theoretical analyses on the thermo-mechanical behavior of power modules designed in a new buildup and interconnection technology based on silver sintering and electroplated copper interconnects have been made. The characteristic difference to other technologies can be seen in the replacement of bonding wires by planar copper interconnects and the high voltage applicability of the resulting modules...
High magnetocrystalline anisotropy (Ku) material was required for future heat assisted magnetic recording media. The ordered L10 FePt film can be prepared to have high [001] texture which shows high perpendicular magnetic anisotropy. Epitaxial growth of FePt films on MoC/CrRu/glass have been proved to promote chemical ordering and texturing. Dual-segregants such as transition metal-oxide with carbon...
High magnetocrystalline anisotropy (Ku) material was required for future heat assisted magnetic recording media. The ordered L10 FePt film can be prepared to have high [001] texture which shows high perpendicular magnetic anisotropy. Epitaxial growth of FePt films on MoC/CrRu/glass have been proved to promote chemical ordering and texturing. Dual-segregants such as transition metal-oxide with carbon...
Abnormal behavior of electrical capacity was investigated for planar microstructures consisting of VO2 films grown on sapphire and metal (Ni/Au) electrodes. At heating from 293K to 350K abrupt change in electrical capacitance of microstructures was revealed by 7 orders of magnitude. Abnormally high electrical capacity is supposed to cause by metal clusters formation with divaricated surface in VO2...
A non-destructive method for the technological control of the structure defects in SiO2 + Si wafers by measuring the internal friction background difference on the nearby harmonics f1 and f2 after mechanical and heat treatments.
Nano Ga-doped ZnO(GZO) thin films with different Ga doping concentration (1, 3, 5, 7at%) were deposited on glass substrate by RF magnetron sputtering. The influence of Ga doping concentration on the microstructure, morphology and thermoelectric properties of GZO films was investigated. It is found that all the films are polycrystalline with C-axis preferred orientation. the crystal size are 22, 15,...
Results from an initial study on the preparation, microstructure, and optical and electrical properties of zinc nitride films are presented. Zinc nitride has a lower bandgap than ZnO and can be fabricated in a thin film form by sputtering and other methods. This material has a potential as a new semiconductor material in photovoltaic, optoelectronic and other applications, offering additional advantages...
The dielectric study of HfO2 thin films deposited on the platinized silicon substrate using RF-sputtering deposition technique have been carried out in the metal-insulator-metal (MIM) configuration over a wide temperature (300 to 500 K) and frequency (100 Hz to 1 MHZ) ranges. The film were deposited at pre-optimized sputtering voltage of 0.8 kV, substrate bias of 80 volt and annealing temperature...
Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectromechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon...
Polycrystal 3C-SiC films have been grown on Si/SiN structures via atmospheric pressure chemical vapor deposition (APCVD) process with a SiH4-C3H8-H2 reaction gas system. The change of SiN microstructure during high temperature pretreatment, and its effect on the crystallinities of SiC growth films were measured using SEM and XRD. Experiment results show that high temperature pretreatment of substrates??...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
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