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Forthcoming CMOS technology nodes are in principle sufficient for achieving both the quantum information density and the speed that are critical for error-free logical qubits. Using data from the roadmap for semiconductor devices from ITRS and IEDM, we applied the standard CMOS design rules to a universal set of quantum logic gates to control silicon qubits. We consequently obtain a scaling law for...
This paper describes how the use of nanostructures can significantly increase the performance of GaN transistors. 100–400 nm fins have been defined underneath the gate electrode of AlGaN/GaN transistors to increase the gate modulation efficiency of these devices and to allow for the tuning of the threshold voltage. The proper design of these fins allows not only an improvement in the DC performance...
Silicon nanowire (SNW) field-effect transistors (FETs) have proven an emerging highly sensitive bio/chemical sensor due to their huge surface-to-volume ratios. However, fabrication of SNWs with both high output and low cost is still challenging. This paper presents a new fabrication method using sidewall mask technology. By depositing a conformal thin film on a sacrificial pattern and removing the...
Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency than their Silicon (Si) counterparts for 200–1.2kV rated applications. The benefits of GaN technologies and their market potential will be highlighted in this paper together with the main challenges that GaN-based power systems need to overcome to reach their full potential and finally enter the market...
Recent advances and new trends in high voltage SiC based MOSFETs are analyzed. The main focus is done on design optimization strategies for reducing the on-state resistance. Gate oxide treatments for improving the interface quality resulting in a lower channel resistance are reviewed as well as solutions for lowering the JFET and bulk resistance components. The 3rd quadrant operation, short-circuit...
Although the hybrid switch consisting of high power Si IGBT and low power SiC MOSFET achieves reduction of losses and cost, there is a severe concern of its short-circuit capability due to its internal SiC MOSFET with small die size. Experimental study shows that the short-circuit capability of hybrid switch is limited by that of SiC MOSFET. The physical mechanism of short-circuit capability of SiC...
Bi-directional switches, also called four quadrant switches (FQS), are the basic building blocks in many power converter circuits, such as cyclo-converters, matrix converters etc. Conventional approaches to realize bi-directional switch involves combination of unidirectional controllable blocking device (IGBT or MOSFET) and diode. In this approach, current flows through multiple devices for any direction...
With their intrinsic superiorities such as high breakdown electric field and high thermal conductivity, SiC MOSFETs are replacing Si IGBTs in power electronics applications. However, at higher voltages SiC MOSFETs are at early stage of development and are not commercialized yet. For the first time, this paper presents thorough static and dynamic performance characterization of 3.3 kV and 30 A discrete...
In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si IGBT. At 400 A, the difference is reduced to 1.3 V. SiC MOSFET offers an on-state resistance of 8.7 mΩ,...
In this paper, a resonant switched-capacitor dc-dc converter is proposed for data center application. The proposed converter possesses features such as high efficiency, high power density and light-weight. Zero current switching (ZCS) can be achieved with the resonant operation, which allows the converter operating under high efficiency. Proper switching device selection and in-depth power loss analysis...
In this paper, we simulate and investigate a novel Tunnel Field-Effect Transistor (TFET) using the charge plasma concept on the source side. Herein, an inverted p-type source is created to form a p+-n tunneling diode structure on a uniformly n-type doped thin silicon film, hence named, Inverted-TFET (I-TFET). Using calibrated simulations, we verify that the Ion is boosted (□ 20 times) in the proposed...
An overview of the state-of-the art of the ongoing research on high-k gate dielectrics for the advanced nano-CMOS technology is presented. The most promising high-k candidates for next-generation MOS devices are highlighted. The associated performance degradation and the scaling limitations of these high-k materials are also discussed and emerging solutions and optimization schemes for the subnanometer...
This paper reviews the advantages and the current status of commercially available SiC power MOSFETs, followed by an analysis of future trends and the potential for future development. Specifically, the review shows the advantages of the recently commercialized trench MOSFET structure and the potential for integration with SiC Schottky diodes to create fast MOSFETs. The current issues and the potential...
This paper presents a Cylindrical GAA TFET based on germanium source for low power applications. The proposed device used the merits of low band gap material such as germanium, which is used as a material in the source region. Device investigations have been made in terms of DC characteristics like ION, IOFF, SS, ION/IOFF. The proposed device increases ON-current as high as 1.9 × 10−5 A/μm, which...
This paper presents an experimental switching behaviour comparison of GaN HEMT and SiC MOSFET against their Si competitors, the Si SJ MOSFET and high speed Si IGBT, in the 650 V class. The devices are first compared using their respective datasheets. The test circuit is introduced and hard switching tests under inductive load are performed to reveal the switching performance of the devices. The differences...
Charge trapping properties of Al-ZrO2/Al2O3/ZrO2-SiO2-Si structures were investigated in attempt to elucidate the instability in their C-V hysteresis. The hysteresis in these structures is mainly due to subsequent trapping of electrons and holes injected from the Si substrate. However the competitive process of electron injection from the gate accompanied by the high leakage introduces instability...
This paper covers characterization and gate drive design for high voltage, gallium nitride (GaN), high electron-mobility transistors (HEMT) in a cascode structure. Parameters of high voltage cascode GaN HEMT devices are described and compared to state-of-the-art Si MOSFET devices. Challenges in designing high frequency GaN based power converter and common design practices are described. Effects of...
DC power delivery system is becoming an attractive alternative in an AC dominant world due to its higher energy efficiency and better cable utilization. It has already been applied in data centers, commercial buildings, electrical vehicle charge stations and micro grid systems, etc. Among many new issues that need to be addressed for the DC power delivery system, ultra-fast and accurate protection...
Silicon Carbide (SiC) power devices with super-cascode structure provide a cost-effective solution for high performance medium voltage power switches. However, these SiC super-cascode devices are still in the early development stage, and limited information on the device characteristics is available. This paper presents the characterization and evaluation of a 4.5 kV, 40 A SiC super-cascode device...
Following the recent advances in the production of 3.3 kV and 10 kV SiC power MOSFETs, Wolfspeed launched an effort to develop a new generation 6.5 kV SiC power MOSFET to fill the medium-to high-voltage fast switching device void in applications such as rail traction and mediumvoltage motor drives. The characteristics of the new generation 6.5 kV SiC power MOSFET rated at a drain current of 30 A,...
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