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With emerging deep submicron technology, device variations limit the SRAM performance and yield. Cell stability defined by the Static Noise Margin (SNM) of the SRAM cell among other figure of merits (FOMs) governs the yield in SRAMs. Variations in the scaled SRAMs increase the probability of cells becoming weak. To ensure reliability of SRAMs it is important to identify such cells post fabrication...
In advanced technology nodes, device variations limit the SRAM performance and yield. Cell stability defined by the Static Noise Margin (SNM) of the SRAM cell primarily governs the performance with respect to yield in SRAMs. Variations in the scaled SRAMs increase the probability of cells becoming weak. To ensure reliability of SRAMs it is important to identify such cells post silicon. In this work,...
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