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This paper presents a new Machine Learning based temperature compensation technique for Ion-Sensitive Field-Effect Transistor (ISFET). The circuit models for various electronic devices like MOSFET are available in commercial Technology Computer Aided Design (TCAD) tools such as LT-SPICE but no built-in model exists for ISFET. Considering SiO2 as the sensing film, an ISFET circuit model was created...
SRAM is a major component in semiconductor industry which often requires extensive and exhaustive method of fault isolation, especially for a non-visual defect in a soft failure mode. For these cases, nanoprobing on CA layer is often performed but there are times when it fails to isolate any defect. One reason may be because the failure only occurs at high temperature test environment. This paper...
Single-electron tunneling (SET) transistors have been studied for the past several decades because they are promising for low-power consumption and fundamental-level control of charge. The quantum dots (QDs) that are the main part of an SET transistor have been demonstrated in a variety of materials, but recently dopant-atoms in silicon have also been shown to work as QDs. However, a single conventional...
This paper presents two different ways of identifying possible defects for electronic components in order to achieve predictive maintenance. The analysis is performed on the components of a power station used in telecommunication. In the first part of the paper is performed a defect analysis based on fuzzy graphs. This leads to the components causing the most accidental stops. In the second part an...
This paper proposes a temperature monitoring scheme using a reconfigurable ring oscillator that has been proposed to estimate process variation. New circuit configurations, whose delay characteristics are sensitive to leakage current, are proposed to exploit the exponential dependence of the leakage current to temperature. Based on transistor-level simulation assuming a 65 nm process technology, the...
DC characteristics of AlGaN/GaN on Si MOS-HEMTs are measured and numerically simulated, with substrate temperature up to 140°C, varying the gate width and gate length. Different gate recess depths are simulated in ATLAS in order to further investigate and optimize the device performance. Thermal boundary conditions and device thermal resistance are included in the structure for accurate simulation...
Modern VLSI designs experience significant temperature change due to variations in workload and ambient conditions. The change in temperature can cause variation in other performance parameters such as power and reliability. Modern chips use complex self-calibration techniques to adjust design parameters to safeguard the chip's operation against temperature fluctuations. Any on-chip self-calibration...
This paper presents a high temperature integrated amplifier implemented in bipolar 4H-SiC technology. A 40 dB negative feedback voltage amplifier has been designed using the structured design method to overcome the temperature variation of device parameters. The amplifier performance degrades as the temperature increases from room temperature up to 500°C. The measured gain is reduced from 39 dB at...
In this paper, we show that dynamic voltage and frequency scaling (DVFS) designs, together with stress-induced BTI variability, exhibit high temperature-induced BTI variability, depending on their workload and operating modes. We show that the impact of temperature-induced variability on circuit lifetime can be higher than that due to stress and exceed 50% over the value estimated considering the...
This document presents the theoretical fundamentals and results for the design of the first stage internet of things system, “Smartleaf". Smartleaf controls and monitors the growth conditions like: Ambient humidity-temperature; irrigation and intensity-cycle of the led light. The collected information is displayed in the android application and also stored in the web-cloud.
The possible physical mechanism of ELDRS effect in bipolar transistors for room and low-temperature irradiation is described. The ELDRS-free device at room temperature suffers on this effect at low-temperature irradiation.
Nowadays, typical (memory) designers add design margins to compensate for uncertainties, however, this may be overestimated leading to yield loss, or underestimated leadingto reduced reliability designs. Accurate quantification of alluncertainties is therefore critical to provide high quality andoptimal designs. These uncertainties are caused by zero-timevariability (due to process variability), and...
Active thermostats' development process to obtain the high precise Zener diode implemented by CMOS technology is presented in the paper. The process flow selection procedure and changes in accordance with the technology of the different schematics are described. Measurement results of the obtained devices are provided.
Increasing power density of high-switching frequency power modules presents a heat transfer challenge that left unaddressed can cause module failure. The first step in addressing this challenge is to estimate the maximum temperature that is observed in the module. PowerSynth, a multi-chip power module layout synthesis tool, utilizes a fast thermal model to quickly determine the steady-state maximum...
The main direction in the development of modern microelectronics is the improvement characteristics of electronic element base in the condition of the high temperature. The method of periodically doped channel is regarded as an application for transistor structures based on organic semiconductors. The possibility of channel conductivity modulation in CMOS transistors, however, is of high interest...
Unattended ground sensors (UGS) are widely used for persistent, surveillance that detects potential threats from intruders without generating false alarms. Battery life is the limiting factor for solutions using digital processing. A 40nW subthreshold analog CMOS (complementary metal oxide semiconductor) chip is fabricated and tested, that wakes up a threat classifying stage. Subthreshold circuits...
The continuous effort how to achieve space-efficient implementation of a digital circuits may soon arrive at the physical limits behind the scaling of fundamental building components. One possible response to this problem can be recognized in adoption of so called multifunctional logic, which also comes with the intrinsically embedded reconfiguration features. Polymorphic electronics concept with...
This paper reviews the two most commonly used integrated temperature sensors available in CMOS-SOI technology: lateral PN diode and a standard MOSFET transistor. Both CMOS-SOI transistors and lateral diodes were designed and fabricated with a standard partially depleted CMOS -SOI 180nm process of IBM. Experimental results indicated that both lateral diodes and MOSFETs can be used to implement temperature...
A framework for the simulation of nanosecond laser annealing of structures found in 3D sequential integration is presented. The framework includes a finite difference frequency domain Maxwell solver and a Poisson solver for the thermal diffusion. Simple applications illustrate the advantages, expected difficulties and optimization levers of this annealing technique.
The degradation of LM124J operational amplifier under the gamma-irradiation is studied for different dose rates and temperatures during irradiation. The results show that degradation of studied devices due to total ionizing dose effects continues to increase significantly, if the dose rate decreases below 0.01 rad(Si)/s, that is not typical for the most of bipolar devices. It can complicate the use...
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