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Very long wave (> 14μm) infrared quantum cascade detectors based on III-V materials are presented. Thanks to the optimum design of electron transport mechanism, high detectivity is obtained without decreasing device responsivity. For the 14.2 μm QCD, a work temperature up to 82K is obtained with a peak responsivity about 0.95 mA/W and detectivity of 1×108 Jones. Peak responsivities is 2.34 mA/W...
Our previous research has reported on the development of the first generation of quantum dots-in-a-well (DWELL) focal plane arrays (FPAs), which are based on InAs quantum dots (QDs) embedded in an InGaAs well having GaAs barriers, which have demonstrated spectral tunability via an externally applied bias voltage. More recently, technologies in DWELL devices have been further advanced by embedding...
In this paper, high quality InGaAs PIN photodetector prepared on S-doped InP substrate by metal organic chemical vapor deposition (MOCVD) are investigated. With a absorption layer of 2.8 mum and a photosensitive diameter window of 60 mum at reverse bias of 5V, dark current of 105 pA, capacitance of 0.475 pF, and the optical responsivities of 0.76 AAV and 1.17A/W, and the detectivities (D*) of 3.69><10...
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