The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
For the first time, the relationship between high frequency and dielectric relaxation of dipoles formed at the high-k/SiO2 interface was systematically investigated in La-doped HfSiON devices. Due to the dipole-induced dielectric relaxation, it was found that high frequency performance, especially voltage gain degrades severely caused by a substantial loss in gate capacitance, transconductance, and...
A gate-last MOSFET has been suggested for 32 nm node CMOSFET, where the integration of a high-k gate dielectric and a metal gate electrode becomes essential to meet the transistor performance requirement. The gate-last MOSFET has been demonstrated as an effective integration scheme to avoid thermal instability and workfunction mismatch issues. Even though feasibility of such gate structure for the...
In this work, two different methodologies are used to quantitatively evaluate devices with metal high-k gate dielectrics for their scaling benefits over conventional polysilicon gate devices. For each method, device characteristics and ring oscillator delay calculations are performed. Our results show that aggressive channel length scaling continually provides transistor performance gain with the...
Methods for extracting threshold-voltage shift (DeltaVth) in high-kappa transistors using the single-pulse drain current-gate voltage (Id-Vg) technique were compared with respect to their accuracies and limitations. It is concluded that an accurate estimation of the (DeltaVth) caused by charge trapping in high-kappa dielectrics can be obtained from the hysteresis of the pulsed (Id-Vg) curve with proper...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.