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This paper presents a highly efficient self-powered sensor with a radio-frequency (RF) transmission range of a few hundred meters. Magnetic energy from power lines was harvested and converted into 3.3 V pulsed voltage using a voltage doubler and an autonomous switching circuit. A ferrite core with a high relative permeability of 3200 was used for magnetic harvesting, and a split core was employed...
A gate-last MOSFET has been suggested for 32 nm node CMOSFET, where the integration of a high-k gate dielectric and a metal gate electrode becomes essential to meet the transistor performance requirement. The gate-last MOSFET has been demonstrated as an effective integration scheme to avoid thermal instability and workfunction mismatch issues. Even though feasibility of such gate structure for the...
In this paper, we investigate an optimized S/D design for gate structures that had been reported for a 16 nm MOSFET. The high-k surrounding MOSFET is found to achieve comparable delay to the conventional gate structure, but the minimum delay is obtained with an underlap S/D, which is in contrary to the conventional one with an overlap S/D. It is also found that more underlap is preferred for the high-k...
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