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Due to the excellent control of DG MOSFETs over the short channel effects, they have been considered as a leading candidate to extend the scaling limit of conventional bulk MOSFETs. However, the hot carrier injection into gate oxides remains a potential problem in reliability field hence altering the device lifetime. In the present paper, a comprehensive drain current model incorporating hot-carrier-induced...
Poly-Si TFTs with vacuum cavity next to the gate-oxide edge (quasi T-gate TFTs) have been fabricated with the wet-etching of gate-oxide and in-situ vacuum encapsulation techniques. The device characteristics of the quasi T-gate TFTs are examined and better than those of conventional TFTs, resulting from the vacuum cavity as the offset region to reduce the leakage current and as the field-induced drain...
This paper presents the results of extensive simulations on the characterization of asymmetrical channel device, namely Dual material Gate Fully Depleted Silicon On Insulator (DMG-FD-SOI) in the sub-100nm dimensions with emphasis on the analog, radio frequency (RF) performances and short channel effects (SCEs). The obtained results may serve as useful guidelines to get a basis overview of this gate-material...
With the DARPA Wide Bandgap Semiconductor Technology RF Thrust Contract, TriQuint Semiconductor and its partners, BAE Systems, Lockheed Martin, IQE-RF, II-VI, Nitronex, M.I.T., and R.P.I, are achieving great progress towards the overall goal of making gallium nitride a revolutionary RF technology ready to be inserted in defense and commercial applications. Performance and reliability are two critical...
The reliability of high electron mobility transistors (HEMTs) significantly depends on the stability of the gate Schottky contact to the semiconductor. Gate sinking during the fabrication and device operation alters transconductance, gate capacitance, and threshold voltage, which are crucial device parameters for modeling HEMT devices and designing circuits. In particular for enhancement-mode InAlAs/InGaAs/InP...
Lasing operation up to 125 /spl deg/C of 1.3 /spl mu/m InP-based VCSELs with AlGaInAs/InP DBR has been demonstrated. A single mode power of 0.6 mW at 85 /spl deg/C, 10 Gbit/s transmission through 10 km and >2500 hours lifetime have been achieved.
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