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The press-pack IGBT (PPI) modules are characterized by design of double-sided cooling, solderless joint and wire-bondless contact. These features allows them to be utilized in the field where power density and reliability are demanding, especially in multi-MW wind turbine applications. However, owing to the press-pack structure, there is parasitic inductance which can't be neglected in the mechanical...
In this paper, an optimal gate driving condition between switching loss and surge voltage is investigated by circuit simulation technique. An equivalent circuit model of power semiconductor devices, such as an IGBT and a FWD, are employed. Chip level transient switching waveforms of IGBT at different gate driving condition are calculated and evaluated with measurement results. Evaluation result shows...
Power IGBT module is one of the crucial factors limiting overall performance, reliability and cost of Hybrid and Electric Vehicles (HEV/EV). A clear booming market of automotive power module has been seen with the accelerated development of HEV/EV. Although a series of standard and custom automotive modules meeting most of customer requirements had been proposed recently, the continuous development...
We develop new power device models that express the waveforms of power devices by functions. These models are described with VHDL-AMS, which is a hardware description language. The developed model can accurately reproduce the diode recovery waveforms calculated by the TCAD model in the same time as when using the SPICE model.
This paper proposes a novel passive hybrid high-voltage DC circuit breaker based on thyristors. A current commutation circuit to turn off the thyristors is designed with elements of relatively low current and voltage ratings. Moreover, voltage balancing strategy is applied to protect the series-connected device.
A floating dummy trench gate IGBT (FDT-IGBT) has been proposed through experimental demonstration. It is shown that the FDT-IGBT is very efficient in low stray inductance, high frequency and relatively high voltage operations which are desirable in HEV/EV system. The proposed chip shows improved trade-off relationship between turn-on di/dt and Eon, and effective di/dt controllability with variations...
Increasing the channel width of an IGBT is an obvious way to lower the Vce, sat value without any influences on the switching losses of the device. Consequently, the achievable benefit of IGBTs is limited due to the corresponding increase of the desaturation current, which threaten the short circuit robustness. This paper presents the benefits of an IGBT which could be realized, if the feature of...
A circuit topology and its control for a bi-directional isolated series resonant converter (SRC) are proposed. In general SRCs, when the output voltage is decreased, the turn-off current and the switching frequency are increased and efficiency is decreased due to the increase of switching loss. MOSFETs are therefore mainly used, as MOSFETs have a lower turn-off loss than IGBTs. In the present study,...
A large area (150mm) high voltage (6.5kV) Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT) has been developed for low frequency high power electronics applications. The devices were fabricated with GCT to diode active area ratio of 1.4. The RC-IGCT wafers were designed with an outer ring gate structure to minimize the stray impedance for the gate signal and also to improve the thermal...
Recently main requirements for power conversion system are further downsizing and higher efficiency. To satisfy these requirements, enhanced power density of power modules should be the key to succeed. In this paper, 3.3kV SiC-Hybrid module with High Power next Core package, which can realize enhanced power density, has been described.
This paper compares several multilevel topologies (3L-NPC, 3L-TNPC, 5L-ANPC and 5L-SMC converters) as an alternative to the 2L converter for low voltage applications, using low voltage IGBT modules. The comparative evaluations are made considering figures of merit such as the total losses and their power loss distribution, the amount of devices of each converter, the maximum output power, the harmonic...
Recent development renewable energy increases the requirement in constructing multi-terminal HVDC systems or HVDC grids. To increase the system reliability, an HVDC circuit breaker will be required. However the existing HVDC breakers developed in recent years use large amount of IGBTs. Considering the cost reduction in real HVDC grids, this paper presents a novel hybrid HVDC circuit breaker. The proposed...
This work investigates the possibility to reduce the thermal stressing of high power IGBT modules in a DC-current application. Using four load current profiles as examples, two mitigation strategies are presented and their benefit to the power stack in terms of lifetime prolongation is evaluated. In the final part of the work, the investigation focuses on the relation between the shape of the load...
The model based temperature control system examined in this paper increases the expected lifetime of IGBT power modules by decreasing the magnitude of temperature swings occurring during operation. In order to achieve this goal additional power losses are produced during low load conditions. This is carried out by presetting a reactive current. The three level neutral point diode clamped three phase...
This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effect of a load current direction change during the desaturation pulse are presented.
A novel online measurement unit for capturing the collector-emitter voltage during conduction mode has been developed. This is a well-known method for the health monitoring of power semiconductors and for estimating the junction temperature. This method is shown in the literature for up to 1000 V DC-link voltages. However, an online measurement for high-voltage (4.5 kV) IGBTs demands a new approach,...
Recently developed press-pack IGBT (PPI) modules, which feature higher voltage rating, larger thermal capacity, faster switching speed and easy utilization in series, have become a serious competitor with solder plastic IGBT modules in the field of voltage-source-converter based high-voltage-direct-current (VSC-HVDC) transmission systems. To give a comprehensive investigation of press-pack IGBT modules,...
This paper presents impacts of the characteristics of Metal Oxide Varistors (MOV) for selecting and calculating the suited amount of MOVs to enable semiconductors to act as DC-Breakers. The specific structure of zinc oxide shows dependencies in its voltage and current characteristics which exhibits a hysteresis.
Short-circuit detection is one important feature of a gate-drive unit and a solution without a collector sense is preferable. With monitoring the gate-emitter voltage, a short can be easily detected. A circuit, which detects and turns off the short, and measurements for different shorts on high-voltage IGBTs are presented.
This contribution deals with the design of a water-cooled on-board charger for electric vehicles. The charger consists of two power stages: a bridgeless power factor correction boost rectifier and an isolating resonant converter. Though wide-bandgap semiconductors with excellent reverse recovery behavior exist, the comparably high cost still advices the use of traditional silicon semiconductors. However,...
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