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A large area (150mm) high voltage (6.5kV) Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT) has been developed for low frequency high power electronics applications. The devices were fabricated with GCT to diode active area ratio of 1.4. The RC-IGCT wafers were designed with an outer ring gate structure to minimize the stray impedance for the gate signal and also to improve the thermal...
A 4500V RC-IGCT switching more than 10 kA in both switch and diode mode was developed for application in cascaded multilevel topologies. The performance was facilitated by using most of a 150 mm silicon wafer for a single device. Furthermore, the stray inductance of the gate bushing inductance was lowered an order of magnitude, and the use of an outer ring gate contributed significantly to lower impedance...
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