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Increasing the channel width of an IGBT is an obvious way to lower the Vce, sat value without any influences on the switching losses of the device. Consequently, the achievable benefit of IGBTs is limited due to the corresponding increase of the desaturation current, which threaten the short circuit robustness. This paper presents the benefits of an IGBT which could be realized, if the feature of...
This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effect of a load current direction change during the desaturation pulse are presented.
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