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The press-pack IGBT (PPI) modules are characterized by design of double-sided cooling, solderless joint and wire-bondless contact. These features allows them to be utilized in the field where power density and reliability are demanding, especially in multi-MW wind turbine applications. However, owing to the press-pack structure, there is parasitic inductance which can't be neglected in the mechanical...
In this paper, an optimal gate driving condition between switching loss and surge voltage is investigated by circuit simulation technique. An equivalent circuit model of power semiconductor devices, such as an IGBT and a FWD, are employed. Chip level transient switching waveforms of IGBT at different gate driving condition are calculated and evaluated with measurement results. Evaluation result shows...
Modern power semiconductor devices have low capacitances and can therefore achieve very fast switching transients under hard-switching conditions. However, these transients are often limited by parasitic elements, especially by the source inductance and the parasitic capacitances of the power semiconductor. These limitations cannot be compensated by conventional gate drivers. To overcome this, a novel...
We propose a MHz-switching-speed current-source gate driver for Silicon-Carbide (SiC) power MOSFETs. The proposed gate driver uses an inductor as a current source during switching transient. Compared with a conventional gate driver, the proposed gate driver reduces switching time ioff and ion by 20% and 32% respectively.
A floating dummy trench gate IGBT (FDT-IGBT) has been proposed through experimental demonstration. It is shown that the FDT-IGBT is very efficient in low stray inductance, high frequency and relatively high voltage operations which are desirable in HEV/EV system. The proposed chip shows improved trade-off relationship between turn-on di/dt and Eon, and effective di/dt controllability with variations...
The characteristics of pulse thyristors, which are viable for safe switching-on in series connection, are being discussed. The influence of turn-on delay distribution for thyristors in stack generated by overvoltages is being evaluated, including the «convergence» effect of turn-on delay distribution in series connection. There is shown suitability of new thyristor stacks for high current pulses commutation.
Increasing the channel width of an IGBT is an obvious way to lower the Vce, sat value without any influences on the switching losses of the device. Consequently, the achievable benefit of IGBTs is limited due to the corresponding increase of the desaturation current, which threaten the short circuit robustness. This paper presents the benefits of an IGBT which could be realized, if the feature of...
Multichip power modules use parallel connected chips to achieve high current rating. Due to a finite flexibility in a DBC layout, some electrical asymmetries will occur in the module. Parallel connected transistors will exhibit uneven static and dynamic current sharing due to these asymmetries. Especially important are the couplings between gate and power loops of individual transistors. Fast changing...
A large area (150mm) high voltage (6.5kV) Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT) has been developed for low frequency high power electronics applications. The devices were fabricated with GCT to diode active area ratio of 1.4. The RC-IGCT wafers were designed with an outer ring gate structure to minimize the stray impedance for the gate signal and also to improve the thermal...
In this paper, DC-DC power converter based on Galium Nitride Gate Injection Transistors (GaN GIT) is presented. The use of such power devices allows to increase of switching frequency and to reach high efficiency. Efficiency measurements of power conversion were carried out for two switching frequencies (100 kHz, 200 kHz, 400 kHz).
A novel topology for LED drivers is proposed. The system does not require rectifier input stage nor storage DC bus capacitor. The topology is described and studied by simulation. Experimental results on an AC LED demonstrator using GaN transistors validate the proposed circuit.
This paper presents the evaluation of a 650 V GaN transistor which is used for a motor drive application. The influence of parasitic effects, e.g. cross conduction and stray inductances, in a GaN phase-leg configuration are analyzed by means of simulation. Additionally, experimental results of the switching transients are shown. Furthermore, measurement issues and other practical challenges are discussed.
This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effect of a load current direction change during the desaturation pulse are presented.
Short-circuit detection is one important feature of a gate-drive unit and a solution without a collector sense is preferable. With monitoring the gate-emitter voltage, a short can be easily detected. A circuit, which detects and turns off the short, and measurements for different shorts on high-voltage IGBTs are presented.
Wide bandgap (WBG) power electronic devices realized using silicon carbide(SiC) and gallium nitride (GaN) are increasingly replacing their silicon(Si) counterparts in power electronics applications. The obvious advantages of these devices with their higher switching speeds, lower on state resistance and high temperature operation over Si devices have aided in the paradigm shift towards wide bandgap...
The performance of a Modular Multilevel Converter (MMC) is presented in this paper, comparing Silicon (Si) and Gallium Nitride (GaN) semiconductors. Moreover, the benefits of high-frequency operation in a MMC topology are analysed along with a power loss distribution evaluation, highlighting the main advantages and drawbacks of different semiconductor technologies.
The Self Turn-ON influences the turn-ON and short-circuit behaviour of the IGBT. This is a positive feedback by the IGBT on itself and increases its turn-ON speed. The strength of the effect depends on the gate structure's design. Therefore, IGBTs with different gate structures are investigated with TCAD simulations. Additionally, its influence during Fault under Load is investigated.
The ultra-low gate charge characteristics and low gate voltage limitation of a GaN enhancement mode HEMT in combination with stray circuit elements poses many challenges of driving them in power electronic applications. This paper investigates the effect of changing gate resistances and including a Zener diode for overvoltage protection in the gate circuit. The goal is to achieve low switching losses...
Wide Band Gap (WBG) transistors using materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC) offer superior electrical and thermal properties, as well as fast switching capability. However, the high dv/dt and high di/dt may cause ringing with the parasitic inductances and capacitances in the switching loop, increasing overshoot voltages and reducing confidence in the design. Also, making...
This paper presents a new gate driver concept that consists of an integrated measurement of the junction temperature and the load current of a power module during inverter operation. For junction temperature measurement the gate driver identifies the temperature sensitive on-chip internal gate resistor by means of a small identification signal that is modulated onto the positive gate voltage. To determine...
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