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This paper presents the evaluation of a 650 V GaN transistor which is used for a motor drive application. The influence of parasitic effects, e.g. cross conduction and stray inductances, in a GaN phase-leg configuration are analyzed by means of simulation. Additionally, experimental results of the switching transients are shown. Furthermore, measurement issues and other practical challenges are discussed.
This paper presents a comprehensive study of the GaN HEMT switching performance in a phase-leg configuration with special focus on the impact of different parasitic effects. Therefore, a simulation model of a double pulse test circuit with GaN devices and including parasitic elements is proposed. The causes of parasitic inductances and capacitances are discussed and their effects are analyzed. Furthermore,...
Gallium nitride (GaN) power devices promise better performance and efficiency compared to silicon transistors. How-ever, the switching characterization of GaN devices is challenging, because of the high switching speed. In this paper the switching behavior of a GaN transistor is investigated with special focus on the impact of current measurement. A circuit simulation model including the critical...
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