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The cut-off frequencies of silicon-germanium hetero-junction bipolar transistors (SiGe HBTs) have entered the THz range at the cost of high current density and relatively low breakdown voltages. Typically, the common-emitter breakdown voltage with open base (BVCEO) is used to indicate the allowed breakdown voltage related operation limit. However, an open base (i.e. an infinite source impedance) is...
Two-dimensional transition metal dichalcogenides (TMD's) are promising materials for CMOS application[1], [2] due to their ultra-thin channel with excellent electrostatic control. TMD's are especially well suited for Tunneling Field-Effect Transistors (TFETs) due to their low dielectric constant and their promise of atomically sharp and self-passivated interfaces[3]-[5]. Here we experimentally demonstrate...
We report temperature dependent transport properties of back-gated graphene TLM structures in a wide temperature range from 35 K to 450 K. We use gold as the contact material and find that the contact resistance exhibits a strong temperature dependence, dropping considerably to a value of 315±127 Ωμm at 35 K as compared to 957±210 Ωμm at 450 K measured at the Dirac point. This significant drop in...
Silicon Carbide (SiC) bipolar integrated circuits are a promising technology for extreme environment applications. SiC bipolar technology shows stable operation over a wide range of temperature. However, the current gain of the devices is suffering from high surface recombination, due to poor oxide passivation. In this paper we propose a gated base structure that offers improved current gain control...
Cathode related current collapse effect in GaN on Si SBDs (Schottky Barrier Diode) is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-VDP (Van Der Pauw) are associated with temperature dependent dynamic Ron transients analysis showing that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation...
Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the...
3D sequential integration requires top FETs processing with a low thermal budget (500°C). The analysis of the origin of the performance difference between Low Temperature (LT) MOSFET and high temperature standard process must take into account a potential EOT modification for short gate lengths. In this work, the difficulty of precise EOT extraction for scaled devices is observed by CV measurements...
In this paper, a compact model for the gate current in HKMG nMOS transistors is presented. The carrier transport through the multi-stack gate dielectrics of HKMG MOS transistors is shown to be dominated by the Trap Assisted Tunneling and Poole-Frenkel conduction mechanisms. Both these mechanisms occur simultaneously and each is dominant in a particular gate voltage range. The interdependence and simultaneity...
This paper presents a wide-band RF shunt capacitive switch reconfigurable by means of electrically triggered Vanadium Oxide (VO2) phase transition to build a true-time delay (TTD) phase shifter. The concept of VO2-based reconfigurable shunt switch has been explained and experimentally demonstrated by designing, fabricating and characterizing an 819 μm long unit cell. The effect of bias voltage on...
Channel thickness Tch dependence of electron mobility μκρρ in thin In0.53Ga0.47As channels was investigated at temperatures T from 35 to 300 K using conventional parametric and pulsed ID-measurements, including a novel technique with time resolution down to 10 ns. It is show that accurate mobility measurements can be obtained using low T and/or fast pulsed measurements, thus avoiding significant underestimations...
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