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Thermal effects of the Tm:YAP crystal and the ZGP crystal that used in 5W Mid-infrared solid-state laser are the important factor which affects the laser output characteristic and the reliability. Starting with the thermal conduction function, Tm:YAP and ZGP crystals thermal effects simulation models are build by using finite element simulation technology, the numerical value of the highest temperature...
This paper describes the analysis approach and methodology when dealing with Digital Quiescent current (IDDQ) most common issue, a vector dependency current drift. A typical Design for Testability (DFT) test structure are used as vehicle to exemplified the approaches that used in the lab scale that probably be the ultimate solution to overcome limitation on most of the lab. A special analysis flow...
As we known, the measurement of junction-to-case thermal resistance (Rth-JC) of semiconductor power devices is very important. In this paper, an approach of transient dual interface method (TDIM) with gate-source voltage (Vgs) as the temperature sensitive electrical parameters (TSEP) was investigated for the measurement of Rth-JC of packaged SiC MOSFET. The measured Rth-JC value of packaged SiC MOSFET...
We evaluate a method for localization of thermal source by using optical probing. A two-dimensional imaging of infrared radiation is commonly used as localization of thermal source. At the flow of failure analysis, thermal lock-in (LIT) method by InSb camera is used to detect a leakage and short point in a package and power device sample. However, an accuracy of localization is not enough due to the...
In this paper, the influences of sandwiched structure trench on the latch-up reliability of the LIGBT with thick SOI substrate are investigated. Based on the influence mechanisms, a novel device structure with trench grounded is proposed, which can enhance the latch-up voltage by 24% with the other performance maintained. Further studies illustrate that the latch-up voltage would decrease dramatically...
In this study, the maximum spatial resolution of infrared thermal imager is 3 μm, and the gate length of AlGaN/GaN HEMTs is between 0.2 μm and 1 μm. Therefore, the infrared thermal imaging instrument measurement results are only an average temperature that is lower than the actual temperature. By combining infrared thermal imaging with Sentaurus TCAD simulation, the junction temperature of AlGaN/GaN...
SRAM is a major component in semiconductor industry which often requires extensive and exhaustive method of fault isolation, especially for a non-visual defect in a soft failure mode. For these cases, nanoprobing on CA layer is often performed but there are times when it fails to isolate any defect. One reason may be because the failure only occurs at high temperature test environment. This paper...
In this work, the high temperature (up to 375°C) dynamic characteristics of 1.2kV SiC VDMOS, including the gate charge, the switching and the body diode reverse recovery characteristics, are measured and analyzed in detail. The experiments show that, with the increase of temperature, the Miller plateau declines, the reverse recovery charge rises, the turn-on time decreases and the turn-off time increases...
In view of reducing the process development cycle times with plausible time-to-market goals, it is of great demands to speed up the assessment pace, but at the same time not to jeopardize for the high level of quality requirements. Highly robust designs and process margins are the key differentiators and should be enforced in particular for the automotive markets. In this work, development of the...
We present a multiscale modeling platform that exploits ab-initio calculation results and a material-related description of the most relevant defect-related phenomena in dielectrics (charge trapping and transport, degradation and atomic species motion) to interpret the reliability and electrical characteristics of logic and memory devices. The model is used to identify and characterize the dielectric...
Conventionally, post-temperature cycling reliability tests, polyimide based Print Circuit Board (PCB) offer better solder ball joint reliability than FR4 based PCB. This paper illustrates that for FR4 materials, by applying suitable PCB stack & solder mask design, 1.5 to 2X increase in solder ball joint reliability can be achieved. Reliability improvement is supported by correlation of theoretical...
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