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Terminal measurements are made to verify that latching varies with gate drive resistance and occurs during turn off. dv/dt is varied from 1600 to 300 V/us with no impact on latch. A time-displaced turn-off current pulse demonstrates that latching occurs at very low drain voltages, suggesting a tailored gate drive. A brief discussion of device structure explains the observations.
This paper examines the properties of a new power MOSFET operating as a depletion-mode device and used as a synchronous rectifier in a low-voltage, current-mode-control PWM switching regulator. The performance of this device is compared to both a Schottky diode and an enhancement-mode power MOSFET. A comparison of the efficiencies obtained for the three cases is presented.
MOS-GTOs represent a new generation of turn-off thyristors offering considerable advantages in the turn-off behaviour as compared to conventional GTOs. However, MOS-GTOs generally require two control electrodes for turn-on, which might be regarded as a disadvantage. This paper shows that in MOS-GTOs with a p-channel cathode structure it is possible to turn the thyristor on and off by controlling only...
Very low-loss, very high speed and snubber-circuitless performance of the newly fabricated high power 1200V–300A class of the static induction (SI) thyristor is introduced and it is applied to the 60kHz–100kW high efficiency (90%) inverter for induction heating.
The fabrication and the characterization of a family of power Bipolar Mode JFET's (BMFET) is reported. In these devices, blocking voltages up to 1000 V or currents up to 18 A (corresponding to 800 A/cm2) have been obtained. Results allow to get an insight in the physics of operation of the BMFET, to define their theoretical limits of operation, and to understand the reasons for the superior performance...
The switching behaviour of a BIMOS switching stage is investigated, taking into account the most important parasitic network and device parameters. Its short-circuit behaviour is also discussed and ways of improving it are presented. The power range is expanded by connecting power MOSFETs in parallel and extending the switching behaviour of the Darlington stage. The parallel-switching of FETs is also...
A cycloconverter with a tank circuit for induction heating which can deliver power to load keeping an input displacement factor at 1.0 is proposed in this paper. Static characteristics are analyzed using the switching functions and the mode functions and operation regions in which the input displacement factor is kept at 1.0 are found. A starting method which uses only a gate pulse sequence for thyristors...
This paper describes a control scheme of a high frequency, high power current source inverter using static induction transistors to suppress the surge voltage and to reduce the switching loss during the commutation of current. The inverter is operated at a leading power factor, which requires the phase angle of the output current to be adjusted to each specific load point by the controller. The stable...
The application of GTO-thyristors requires special short-circuit protection equipment. A simple method based on the proportionality of turn-off current and storage time of a GTO is shown to protect GTO-thyristors against turn-off failure during a short circuit. Additionally, this method can be employed for overload protection, failure diagnosis and current monitoring.
With the introduction and wide acceptance of gate turn off power devices (e.g. Bipolars, Power Fets, GTO's, etc.), the switching behavior of converters has reached the point where further improvements in firing and switching networks bring only marginal benefits. Consequently, the research interests in the area of static converters have been shifting toward improving the process of power conversion...
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