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The validity of applying state-space averaging and linearization to the control law of current-injected switching regulators for designs with wide-band, first-order, open-loop responses without RHP zeroes is verified. Quantitative closed-loop performance comparisons are made of current-injected versus voltage control for the boost and buck switching regulator topologies.
It is shown that internal low-frequency energy storage can be used to achieve harmonic-free operation and controllable power factors in converters whose desired operations require unequal instantaneous input and output powers, such as in single-phase rectifiers, inverters, cycloconverters, and reactive power generators. A systematic synthesis and analysis technique is developed for such converters...
A one-dimensional analytic model for the Insulated Gate Bipolar Transistor (IGBT) which includes a high-doped buffer layer in the low-doped bipolar transistor base is developed. The model is used to perform a theoretical trade-off study between IGBTs with and without the buffer layer. The study is performed for devices of equal breakdown voltages, and the critical parameters chosen to “trade-off”...
A new method of power pulse modulation with internal frequencies of tens of kHz which is also suitable for multikilowatt power levels is applied to a series-resonant converter system for generating synthesized multiphase bipolar waveforms with reversible power flow. The power circuitry of the converter is provided with one single high-frequency resonant link in the direct energy path. Natural current...
The goal of this study is to define the optimal PWM strategy adapted to a given variable-speed induction motor drive. A complete set of simulation programs performs steady-state and transient analysis of wave-forms. Some original PWM modes have been implemented on two digital modulators.
A novel resonant switch operating under the principle of zero-voltage switching is presented. In contrast to the zero-current switching, this technique eliminates the switching loss and dv/dt noise due to the discharging of MOSFET's junction capacitances and the reverse recovery of diodes, and enables the converters to operate at yet higher frequencies.
Terminal measurements are made to verify that latching varies with gate drive resistance and occurs during turn off. dv/dt is varied from 1600 to 300 V/us with no impact on latch. A time-displaced turn-off current pulse demonstrates that latching occurs at very low drain voltages, suggesting a tailored gate drive. A brief discussion of device structure explains the observations.
This paper examines the properties of a new power MOSFET operating as a depletion-mode device and used as a synchronous rectifier in a low-voltage, current-mode-control PWM switching regulator. The performance of this device is compared to both a Schottky diode and an enhancement-mode power MOSFET. A comparison of the efficiencies obtained for the three cases is presented.
MOS-GTOs represent a new generation of turn-off thyristors offering considerable advantages in the turn-off behaviour as compared to conventional GTOs. However, MOS-GTOs generally require two control electrodes for turn-on, which might be regarded as a disadvantage. This paper shows that in MOS-GTOs with a p-channel cathode structure it is possible to turn the thyristor on and off by controlling only...
Very low-loss, very high speed and snubber-circuitless performance of the newly fabricated high power 1200V–300A class of the static induction (SI) thyristor is introduced and it is applied to the 60kHz–100kW high efficiency (90%) inverter for induction heating.
The fabrication and the characterization of a family of power Bipolar Mode JFET's (BMFET) is reported. In these devices, blocking voltages up to 1000 V or currents up to 18 A (corresponding to 800 A/cm2) have been obtained. Results allow to get an insight in the physics of operation of the BMFET, to define their theoretical limits of operation, and to understand the reasons for the superior performance...
The switching behaviour of a BIMOS switching stage is investigated, taking into account the most important parasitic network and device parameters. Its short-circuit behaviour is also discussed and ways of improving it are presented. The power range is expanded by connecting power MOSFETs in parallel and extending the switching behaviour of the Darlington stage. The parallel-switching of FETs is also...
Two-dimensional calculations on multiple field limiting ring structures can be simplified if wide rings are used. A design method using this assumption is presented, where the optimum ring design is determined from interpolations between single ring data. Influence of different parameter variations on ring design or on voltage yield is discussed.
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