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This paper examines the properties of a new power MOSFET operating as a depletion-mode device and used as a synchronous rectifier in a low-voltage, current-mode-control PWM switching regulator. The performance of this device is compared to both a Schottky diode and an enhancement-mode power MOSFET. A comparison of the efficiencies obtained for the three cases is presented.
The power supply described in this paper was developed for use in systems utilizing VHSIC integrated circuits which require voltages between two and three volts at substantial levels of current. The philosophy guiding this design, the pertinent trade-offs which were examined, and the data taken are presented.
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