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In recent years, two dimensional (2D) materials have attracted much attention due to its potential to overcome the roadblocks of electronics miniaturization and follow Moore's law. These materials consist of atoms covalently bonded along one plane and weakly bonded with its neighboring planes via van der Waal forces [1]. This property allows these materials to be mechanically cleaved or exfoliated...
A important challenge of tunneling field-effect transistors (TFETs) is to realize both low SS of sub-60 mV/dec. and high drain Ion/Ioff ratio at the same time [1, 2], which strongly demands the optimization of materials, structures and fabrication process. For this purpose, the choice of source/channel materials with the reduced (effective) band gap is important for increasing tunneling current with...
Millivolt switches will not only improve energy efficiency, but will enable a new capability to manage the energy-reliability tradeoff. By effectively utilizing this system-level capability, it may be possible to obtain one or two additional generations of scaling beyond current projections. Millivolt switches will enable further energy scaling, a process that is expected to continue until the technology...
Power consumption has emerged as the major problem limiting the scalability and the functional throughput of modern logic devices [1]. This problem has stimulated a great deal of interest to research alternative technologies, which may overcome the constraints inherent to complementary metal-oxide-semiconductor (CMOS)-based circuitry and provide a route to more functional and less power-consuming...
Magnetic logic devices have advantages of non-volatility, radiation hardness, scalability down to the sub-5-nm range, and three-dimensional (3D) integration capability. Despite these advantages, nanomagnetic applications for information processing are limited today. The main stumbling block is the inadequately high energy required to switch information states in the spin-based nanodevices. Recently,...
Sensors and wearable systems are expanding to make the IoT era. Requirements of the devices to realize the expansion of the systems are low-power LSIs which can operate eternally with energy harvesting power sources. The LSI should operate fast enough to deal with the data, followed by sleep mode to save the energy. The data during sleep mode should be reliably stored for the next intermittent operation.
To utilize nanoelectromechanical (NEM) switches for ultra-low power applications, sub-1 V actuation is one of the most important challenges to overcome [1-4]. We develop a CMOS-compatible technique that introduces ultra-small air gaps (<5 nm) for lateral NEM switches to achieve zero-leakage and zero-crowbar-current circuits operating at sub-1 V. Ultra-small gap formation is achieved using growth/transfer...
The energy efficiency of complementary metal-oxide semiconductor (CMOS) logic circuits is fundamentally limited by the off-state leakage (Ioff) of the transistors [1]. Mechanical switches can achieve zero Ioff and hence can overcome this limit, in principle; therefore, scaled relay technologies recently have been investigated for ultra-low-power digital integrated-circuit (IC) applications [2]. In...
Power-gating (PG) architectures employing nonvolatile state/data retention are expected as a highly efficient static energy reduction technique for high-performance CMOS logic systems. In this paper, two types of PG architectures using nonvolatile retention, i.e., nonvolatile power-gating (NVPG) and normally-off (NOF), are systematically investigated for FinFET-based nonvolatile SRAM (NV-SRAM) using...
Increasing the sensitivity of optical receivers is of paramount importance to reduce the energy cost of optical communications [1]. For this, the signal to noise ratio (SNR) of the front-end detector and amplifier must be improved. A very efficient way of achieving this is to introduce gain right at the detection level. Avalanche photo detectors (APDs) are a common approach for this, but bipolar phototransistors...
Recently, tunnel field effect transistors (TFET) based on heterostructures with type-II and type-III band alignment have been proposed as a means of obtaining switching at room temperature with subthreshold slopes below the thermal limit of 60 mV/decade, and without sacrificing drive current [1,2] While early computational efforts have delivered promising results, experimental work has not seen switching...
Controlled motion at the nanoscale is an emerging avenue for low powered electronics. The necessity for precision at the nanoscale makes organic chemistry an exciting addition to electronics, as organic synthesis is based upon the design and creation of nanoscale and sub-nanoscale structures. We have recently demonstrated the role of organic materials in the development of a nanoelectromechanical...
We investigate negative capacitance transients-the time period during ferroelectric switching when the voltage across a ferroelectric changes in a direction opposite to that of the charge-by constructing a simple series network of an isolated single crystalline ferroelectric capacitor and an external resistor. A study of negative capacitance dynamics in such a circuit reveals that the time scale of...
Tunnel field-effect (TFET) transistors [1] are among the most promising devices for future low-power electronics [2]. However, TFETs usually suffer from low ON-current values. Recently, it has been shown that TFETs made from 2D materials, can in principle, provide high ON-currents due to their tight gate control [3]. A better gate control over the channel increases the electric field at the tunnel...
Nanoelectromechanical (NEM) switches have emerged as a promising competing technology to the conventional metal-oxide semiconductor (MOS) transistors. NEM switches exhibit abrupt switching behavior with large on-off current ratios, near-zero off-state leakage currents and sub-threshold slopes below the 60 mV/decade theoretical limit of conventional MOS devices [1]. However, current NEM switches commonly...
The spontaneous emission rate of light emitters has been shown to have strong dependence on their local electromagnetic environment1. Optical antennas exploit this effect and can be used to greatly increase the spontaneous emission rate of a coupled light emitter. There have been several demonstrations of this effect with promising results using dye molecules and Er3+ ions2,3. It is predicted that...
As transistors start to approach fundamental limits and Moore's law slows down, new devices and architectures are needed to enable continued performance gains. New approaches based on RRAM (resistive random access memory) or memristor crossbars can enable the processing of large amounts of data[1, 2]. One of the most promising applications for RRAM crossbars is brain inspired or neuromorphic computing[3,...
Before the current computational era, when the most common processors had a single processing core, the speed of computation was mainly defined by the speed of that core. Faster cores usually reflected in faster algorithms and applications. In the current era, the speed of computation is no longer primarily boosted by faster cores. Due to the thermal effect known as the power wall, the increment in...
The 21st century digital economy and technology is presently facing fundamental scaling limits (heating and the superparamagnetic limit) as well as societal challenges: the move to mobile devices and the increasing demand of cloud storage leads to an enormous increase in energy consumption. These developments require new strategies and paradigm shifts, such as spin-based technologies and the introduction...
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