The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This study presents an experimental analysis of the Xray radiation effect on the drain induced barrier lowering (OIBL) of strained and unstrained, p and n type triple gate SOI MuGFETs. In both types of devices, the narrow fin transistors are more immune to radiation because of the better coupling among the gates. It is shown that total dose damage in nMuGFETs always leads to a performance degradation,...
An analysis of the level of hot carrier (HC) degradation caused in sub-100 nm n-type MOSFETs operated from DC up to 20 GHz, is introduced. The analysis comes accompanied with experimental results. The degradation process is done through the application of controlled DC currents at well defines periods of time. The recorded S-parameters before and after DC degradation allows the observation of the...
In this work we present the design and fabrication of a test chip to be used for the characterization of the main electrical, mechanical and thermal properties of the structural materials involved in the development of polysilicon-based electrothermal actuators. With this combined bulk/surface micromachined chip, parameters such as Young's modulus (E), stretching or compression stresses (±σ), stress...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.