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This paper describes dynamic characteristics and power loss analysis of a high-voltage GaN-HEMT in cascode. The GaN-HEMT is "normally-on" and fabricated on 6-inch Si substrate using our Si mass-production line. A figure of merit (a product of RDSon (m Ω) and Qg (nC)) of the GaN-HEMT in cascode is as low as 1400. Simple switching characteristics with resistive load and power efficiency measurements...
This study presents the capability to use conventional silicon power semiconductor devices (Si-IGBT, Si-CoolMOS™) at 200°C operating junction temperature in a BOOST converter for traction automotive application. For each die, nano-scale silver sintered die-attach has been used in order to guaranty an optimum heat transfer between the chip and the substrate. Electrical static characterizations (breakdown...
With voltage-balancing control, the voltage difference among sub-module (SM) capacitors in a modular multilevel converter can be reduced. However, this comes at the cost of increased device switching frequency. In this paper, the relationship between the switching frequency and SM capacitor unbalanced voltage is investigated. As the relationship depends on the voltage-balancing control schemes, a...
This paper proposes the pulse width modulation (PWM) control strategy for low-speed operation in the three-level neutral-point-clamped (NPC) inverters based on the bootstrap gate drive circuit. For the purpose of the cost reduction, several papers have paid attention to the bootstrap circuit applied to the three-level NPC inverter. However, the bootstrap gate driver IC cannot generate the gate signal...
This paper describes the application of SPICE models that have been developed for very high power GaN transistors and their integrated drive circuitry. GaN devices that are expected to be used in automotive applications are required to operate at high temperatures and provide very high current operation. The characteristics of drive circuitry must be simulated along with the very large GaN devices...
There is little work done to study the nuances related to paralleling the higher speed SiC Mosfet devices when compared to Si devices. This paper deals with the parallel operation of packaged silicon carbide (SiC) MOSFETs. The parameters that affect the static and dynamic current sharing behavior of the devices have been studied. We also investigate the sensitivity of those parameters to the junction...
A new GaAs power switching device, the gFET™ switch was introduced at APEC 2013. This paper describes devices developed since APEC 2013 including depletion mode devices with nominal on resistances of 7, 14 and 40 MΩ as well as an enhancement mode device with a nominal on resistance of 40 MΩ. The enhancement mode device is particularly well suited for use as a control switch in buck converters. The...
Eliminating the spurious turn-on in the bridge-leg configuration plays an important role in preventing excessive switching loss, self-oscillation and shoot-through. A passive level-shifter is proposed to superimpose a negative gate voltage to bring down the spurious triggering pulse and thereby avoid the spurious turn-on. The merits of the devised auxiliary circuit lie not only in that it consists...
High voltage power transistors used in inverters for photovoltaic panels and avionic applications are naturally exposed to Terrestrial Cosmic Rays, or Atmospheric Neutrons, which are known to induce catastrophic failures such as burnouts or gate ruptures. Accelerated tests on different power MOSFETs and IGBTs technologies were performed in ANITA neutron facility, at Uppsala, Sweden. Experimental details...
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