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This paper describes dynamic characteristics and power loss analysis of a high-voltage GaN-HEMT in cascode. The GaN-HEMT is "normally-on" and fabricated on 6-inch Si substrate using our Si mass-production line. A figure of merit (a product of RDSon (m Ω) and Qg (nC)) of the GaN-HEMT in cascode is as low as 1400. Simple switching characteristics with resistive load and power efficiency measurements...
This paper describes the application of SPICE models that have been developed for very high power GaN transistors and their integrated drive circuitry. GaN devices that are expected to be used in automotive applications are required to operate at high temperatures and provide very high current operation. The characteristics of drive circuitry must be simulated along with the very large GaN devices...
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