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High voltage power transistors used in inverters for photovoltaic panels and avionic applications are naturally exposed to Terrestrial Cosmic Rays, or Atmospheric Neutrons, which are known to induce catastrophic failures such as burnouts or gate ruptures. Accelerated tests on different power MOSFETs and IGBTs technologies were performed in ANITA neutron facility, at Uppsala, Sweden. Experimental details...
An automated system designed to perform reliability tests on power transistors is reported. An innovative non-standard procedure for High Temperature Reverse Bias complemented with Electrical Characterization Test based on the division of the total stress time in several short periods is proposed. Thanks to a purposely designed mini-heater the system controls the individual chip temperature on the...
This paper investigates the effects that terrestrial neutrons can induce on power MOSFETs when they are biased during their normal working conditions especially in inverters for photovoltaic applications. After a brief review of power MOSFETs failure phenomena caused by neutron irradiation (with emphasis on so called “Single Event Effects” (SEE)), the results of an accelerated test performed with...
This paper studies and analyzes the root causes of anomalous failures of low-voltage p-channel power MOSFETs during the intrinsic diode recovery time in dV/dt test. In particular, the dV/dt characterization test is described and, afterwards, specific electrical tests are provided to explain the root causes. From the electrical results point of view, the dV/dt slew rate does not involve an intrinsic...
This paper implements a theoretical study on power MOSFETs internal capacitances. To simulate these capacitances the paper takes into consideration the internal structures of the power MOSFETs, materials and process characteristics. Finally, real measures are implemented on a power MOSFET device by ST and are compared to the simulated data to validate the model.
This paper studies the mobility of the carriers in the inversion layer of the power MOSFET and how this affects the TC (thermal coefficient). All the scattering mechanisms that are involved in the inversion layer were considered to modeling the mobility. In particular, the effect of the transverse electrical field, phonons and the Coulomb scattering effects will be studied. Particular attention will...
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