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High temperature operation of a quantum dot laser integrated with a silicon waveguide on a SOI wafer was demonstrated for the first time. Up to 100°C temperature, output power sufficiently high to achieve an optical error free link was obtained.
Low-cost access to advanced photonic integration technology is becoming available through multi-project wafer runs, using standardized building blocks. We present the design methods and the current status for InP-based photonic ICs.
Optoelectronics with femtojoule or lower energies and compact custom and self-designing optics may enable the lower energy per operation and higher bandwidth density required for continued scaling of information processing. Novel approaches will be presented.
A Chip-level EAM/MQW-based optical interconnect concept with vertically-coupled efficient CW VCSELs and inter-chip links is analyzed, enabled by a lithographically-defined high-density multi-mode waveguide fabric. Projected energy/bit, bandwidth density, and packaging tolerances enable scaling with foreseeable CMOS technology.
We demonstrate the first monocrystalline germanium gate photoMOSFET integrated with silicon photonic waveguides and grating coupler. We measure a responsivity of 1.2 A/W at 1550nm with a 2×4 µm2 germanium gate.
An eigenmode expansion method is used to model and optimize optical couplers between SOI waveguides and Ge/SiGe devices. Electroabsorption modulator performances are estimated in term of extinction ratio and insertion losses.
Heterogeneous integration enables all the elements of photonic systems to be fabricated on a single chip with silicon foundries allowing circuits to meet the complexity, and cost requirements of the next generation of communication systems.
A standard deviation in lasing wavelength lower than 500pm is characterized on nominally identical and optically-pumped microdisk lasers, heterogeneously integrated on the same SOI circuit. This lasing wavelength uniformity is obtained using electron-beam lithography.
The design and characterization of a silicon-on-insulator planar concave grating based (de)multiplexer operating at 3.8µm is reported. Low insertion loss (≈1.6dB) and good crosstalk characteristics (≈19dB) are demonstrated.
Mode transformers between very compact substrate removed waveguides and very big polymer waveguides were designed and fabricated. Transition loss between two types of waveguides was quantified and 7 dB insertion loss improvement was measured.
In this paper we describe Ge-on-Si waveguides and Mach-Zehnder interferometers operating in the 5.2 – 5.4 µm wavelength range. 3dB/cm waveguide losses and Mach-Zehnder interferometers with 20dB extinction ratio are presented.
We demonstrate a platform for monolithic integration of active and low loss passive components. The passive section is realized by removal of the quantum wells. Characterization results of lasers with passive DBR reflectors are presented.
We report on scalable bidirectional optical coupling between silicon-on-insulator waveguides and polymer waveguides. Coupling loss of 0.8 dB and ±2 µm misalignment loss of 0.3 (0.6) dB are measured at TM (TE) polarization states.
In this paper we discuss design and optimization specifics of composite IIIV/Si waveguide gratings with 2D sub-micron optical confinement, as applied to DFB lasers. Specifically we calculate the coupling coefficient, measure and compare the theoretical and experimental results.
We present a silicon photonics evanescent sensor for glucose absorption spectroscopy. The important design aspects of this miniature sensor are discussed as well as the experimental challenges. We demonstrate detection of glucose down to 14 mmol/L, close to the physiological range of blood glucose in humans.
We review recent advances in the development of slab-coupled optical waveguide (SCOW) devices, progress toward a flexible photonic integration platform containing both conventional high-confinement and SCOW ultra-low confinement devices, and applications of this technology.
We demonstrate a high-power and high-linearity photodiode module based on a 1×4 MMI-Splitter and a 4×PD-Array. The module achieved 10 dBm output power at 10 GHz and an OIP3 of >20 dBm at 20 GHz.
Compound semiconductor electro-optic modulators based on substrate-removal are described. Modulators with metal and buried electrodes in bulk GaAs have Vπ of 5 V and 0.3 V respectively. For both types bandwidths exceeding 35 GHz were also demonstrated.
Experimental demonstrations of ring resonators with TiO2 cores are presented and measured with −2.9pm/K resonance shift. Their thermo-stress-optic behavior was found to be important to their function; therefore an inclusive model is presented and simulated numerically.
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