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The current work details the development and optimization of the fabrication processes for nanoelectromechanical resonators such as surface and bulk acoustic wave (SAW/BAW) devices that operate in GHz range, specifically based on nano-interdigitated transducers (n-IDTs). The method combines electron-beam lithography (EBL) and lift-off process to fabricate the n-IDTs with finger patterns having line...
In this paper, two different architectures of (6–3) and (7–3) compressors, including the conventional topology based on full adder cells with the most interesting of those recently proposed and XOR/MUX based topology, are analyzed and compared for speed, power consumption and power-delay product at transistor-level in Carbon Nano-tube Field Effect Transistor (CNFET) technology. Simulations are carried...
In this work, the wafer scale fabrication of atomic layered transistors are demonstrated by selective fluorination of graphene with a remote CF4 plasma, where the generated F-radicals preferentially fluorinated graphene surface at low temperature (<200°C) while this technique suppress the defect formation by screening out the ion damage effect. The resultant grapehene shows electrical semiconducting...
In this paper, graphene electronic structure of carbon nanotubes has been analyzed and validate with past theoretical and experimental results. The energy dispersion relation, effective mass and intrinsic carrier concentration of graphene have been analyzed to build diverse carbon nanotubes. The electronics properties of graphene are subject to change with the different diameters and wrapping angles...
Although great effort have been devoted for Si-based light generation and modulation technologies since the 1980s, monolithic growth of electrically pumped laser on Si remains the ‘holy grail’ for Si photonics. In this paper, room temperature lasing near the telecom wavelength of 1300 nm has been demonstrated at room temperature with low threshold current densities for InAs/GaAs quantum-dot lasers...
Amorphous-selenium (a-Se) based photodetector is a promising candidate for high sensitivity imaging device with high spatial resolution, high response speed, and a wide detection wave range. Although HARP (high-gain avalanche rushing amorphous photoconductor) is known to be the first a-Se based photodetector that reported carrier multiplication and achieved effective quantum efficiency of 10, physical...
This paper describes the fabrication and high speed characterization for uni-traveling-carrier photodetectors (UTC-PD) with dipole-doping layers. The dipole-doping InGaAs/InP layer has been introduced at the InGaAs (absorption layer) and InP (collection layer) interface to prevent current blocking in our UTC-PD devices. These UTC-PDs have achieved high photocurrent of 52 mA, high responsivity of 0...
The study is to demonstrate a dual-band infrared images based on two stacked InGaAs and GaAs-capped InAs QDIP structure, with the use of nano-scale Al2O3 surface passivated layer by ALD system deposited to decrease the device shot noise and boost the operation temperature of the thermal imaging FPA to 180 K.
Inverted organic solar cells with device structure ITO/ZnO/ poly(3- hexylthiophene) (P3HT):[6,6]-phenyl C61 butyric acid methyl ester (PCBM) /MoO3/Ag were fabricated employing low temperature solution processed ZnO as electron selective layer. Devices with varying film thickness of ZnO interlayer were investigated. The optimum film thickness was determined from photovoltaic parameters obtained from...
A dual-silicon-nanowires based nanoelectromechanical (NEMS) switch is fabricated using standard complementary metal-oxide-semiconductor (CMOS) compatible process. The switch comprises a capacitive paddle and two silicon nanowires both connect with the paddle, form a U-shape structure. The high electrostatic force generated from the large capacitive paddle and high flexible structure favor of silicon...
A comprehensive device modeling for thin film CIGS-based solar cell with MgZnO buffer layer has been performed. The effects of thickness, doping, and alloy composition of various device constituent layers are extensively studied while optimizing device performance of the solar cell at room temperature. In this study, a maximum power conversion efficiency of 21.4% is achieved with performance parameters...
A novel one-way-propagating terahertz plasmonic waveguide at a subwavelength scale is proposed based on a metal-dielectric-semiconductor structure. Unlike one-way plasmonic devices based on interference effects of surface plasmons, the proposed one-way device is based on nonreciprocal surface magneto plasmons under an external magnetic field. Theoretical and simulation results demonstrate that the...
This article reports on the development and realization of a super high frequency surface acoustic wave (SAW) nanotranducer architecture based on a bi-layer of aluminum nitride (AlN) and ultrananocrystalline diamond (UNCD). The SAW nanotransducer was fabricated on an AlN/UNCD structure using electron beam lithography and lift off processes. The SAW device consists of nano inter-digitated transducers...
Most of research groups have studied on Tunneling Field-Effect Transistors (TFETs) with assumption that there are no gate/source overlap and abrupt source/channel junction. In this work, we study the electrical characteristics of double-gated thin-body TFET with gate/source overlap and no abrupt source/channel junction. From transfer characteristics, hump phenomenon occurring with increasing gate...
Band to band tunneling (BTBT) is a major challenge in Ge FinFETs due to its smaller band gap. Narrow fin widths reduce BTBT due to quantum confinement (QC). However, Line Edge Roughness (LER) on narrower fins causes large VT variability. Previously, we have proposed an architecture named Epitaxially Defined (ED) FinFET to reduce VT variability due to LER wherein channel depletion is defined by low...
FinFET devices with source drain underlaps are attractive due to their high Ion/Ioff ratios [1]. However, a thorough understanding of the device parasitics on underlap FinFET circuit performance is yet to be attained. In this paper, we report a new Extension Transistor Induced Capacitance Shielding (ETICS) phenomenon. Due to this phenomenon, the effective values of a FinFET logic gate's input and...
We present in this paper a microsystem coupling electrowetting on digital microfluidic and nanostructured surfaces for matrix-free Laser Desorption/Ionization Mass Spectrometry (LDI-MS) analysis of small biomolecules. Silicon nanowires are processed to form highly sensitive pads for LDI analysis and also to produce superhydrophobic surfaces for enhanced transfer of droplets containing the analytes...
In this paper we have studied the effects of the contact material on the photovoltaic characteristics of p-CuO/n-Si solar cells fabricated by using the RF sputtering method and annealed by rapid thermal process. We have fabricated three types of solar cells with different front contact. Type (I) is the p-CuO/n-Si solar cells with Cu front contact, Type (II) is the p-CuO/n-Si solar cells with Al front...
In this paper, fabrication of through-silicon vias (TSV) with different diameters ranging from 60 to 150 μm is reported. It was observed that at the low current density of 20 mA/cm2, all the through-holes with different diameters are filled with copper without voids and pores. At higher current density of 40 mA/cm2, however, the pillars with diameters bigger than 100 μm tend to have voids at the middle...
This paper presents a field programmable gate array (FPGA) prototype of a display unit to drive the eight-by-eight LED dot-matrix displays of two colors. The circuit design was Verilog-based and downloaded to the Spartan-3 FPGA chip of the Spartan-3 Starter Board. The display unit was able to generate four character patterns to rotate in four directions successfully. The design itself suggests a wide...
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