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The improvement of the intrinsic high-frequency performance of emerging transistors is commonly based on reducing electron transit time and it is pursued by either reducing the channel length or employing novel high-electron-mobility materials. For gate-all-around transistors with lateral dimensions much shorter than their length, a careful analysis of the total time-dependent current shows that a...
The aim of this work is to show the dependence of the time dependent current of gate-all-around transistors on their geometries and thus to find out how to optimize their intrinsic AC behavior. The Ramo-Shockley-Pellegrini (RShP) theorem and many-particle Monte Carlo technique are used, through the recently developed BITLLES simulator which is devoted to simulate classical and quantum electronic devices,...
The main goal of this work is to study the effect of the structure geometries on the time dependent current in the nano electronic devices. The Ramo-Shockley-Pellegrini theorems are used together with many-particle Monte Carlo simulator to study this problem. In particular, it is shown that when the lateral surfaces (Ly, Lz) where the total current is collected are decreased, while keeping the longitudinal...
We present in this paper a novel approach for dual-and tri-band filters design with independently controlled center frequencies and bandwidths. On the one hand, a stepped impedance resonator (SIR) is designed to operate at the center frequencies of two bands simultaneously (dual-band), on the other hand, two stepped impedance resonators are designed to operate at the center frequencies of three bands...
In this paper, an accurate technique to model temperature, bias, and frequency dispersion effects in MESFET and HEMT transistors is presented. The approach is based on a single drain to source current source Ids nonlinear model. Pulsed I/V characteristics measurements are used to model bias and frequency dispersion effects while temperature is directly implemented in the Ids equation. Model parameters...
An accurate approach to the simulation of the DC and pulsed IV characteristics of GaAs MESFETs over the -70 to -+70degC temperature range is presented. The new approach, suitably modified can be applied to existing DC models to increase their accuracy and range of operation.
In this paper, a novel technique to study the evolution of the electronic mobility in GaAs microwave MESFET's devices versus both, frequency and bias condition is presented. The technique employs scattering parameters measurement over the frequency band of interest along with DC and pulsed transconductance and output conductance device measurements. The examination of the presented results shows the...
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