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The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer,...
Ultrahigh-voltage 4H-SiC PiN diodes with improved junction termination extension (JTE) structures have been investigated. Breakdown characteristics of 4H-SiC PiN diodes with conventional single-zone JTE was shown to be severely affected by the charge near the SiO2/SiC interface from experiment and device simulation. Taking the effect of the interface charge into account, and by using “Space-Modulated”...
1200V SiC vertical trench JFETs have been evaluated for their reverse conduction properties. Absent of a traditional body diode, the SiC trench JFET is shown to be able to operate effectively in reverse mode when used with or without an antiparallel diode in applications requiring reverse commutation. Device characteristics and experimental results are given for both traditional half-bridge and cascode...
This paper discusses the latest developments in the optimization and fabrication of 3.3kV SiC vertical DMOSFETs. The devices show superior on-state and switching losses compared to the even the latest generation of 3.3kV fast Si IGBTs and promise to extend the upper switching frequency of high-voltage power conversion systems beyond several tens of kHz without the need to increase part count with...
We have successfully developed novel extraction enhanced lateral insulated gate bipolar transistors (E2LIGBTs), which exhibit super-high speed switching of 34 ns turn-off time and a low on-state voltage of 3.7 V at 84 A/cm2 simultaneously with a high breakdown voltage of 738V. For the first time, E2LIGBTs have exceeded the counterpart lateral DMOS both in switching speed and in on-resistance. The...
Here is presented the development of the new BCD800 platform which conjugates 3.3V CMOS logic, 5/25/30V power devices and a 800V nLDMOS in a 0.35µm technology node. LV components can be placed into a floating pocket which can be referred up to 650V, furthermore this process features an innovative lateral junction isolation module obtained by a boron-doped poly-filled deep trench with great advantages...
This paper presents a single BCD technology platform with high performance power devices at a wide range of operating voltages. The platform offers 6 V to 70 V LDMOS devices. All devices offer best-in-class specific on-resistance of 20 to 40 % lower than that of the state-of-the-art IC-based LDMOS devices and robustness better than the square SOA (safe-operating-area). Fully isolated LDMOS devices,...
This paper presents a 20V-rated planar dual gate oxide NLDMOS power device structure fabricated in a 180nm power management technology. The performance of the planar dual gate device structure is compared to a conventional STI-based device and it is shown that the planar dual gate structure has superior BVds-Rsp, gm, HCI reliability, and forward safe operating area figures-of-merit. The planar dual...
Power converters, e.g. in a popular synchronous buck topology, need high performance power MOSFETs in order to achieve high efficiency, low voltage ringing, ESD protection and low EMI. To satisfy these requirements, an asymmetric gate resistor power MOSFET is proposed by integrating a shunt resistor with a parallel LDMOSFET-connected diode in a source down power MOSFET (NexFET). The novel MOSFET has...
A sensefet monitoring is used for overload, open-load detection and load current analog feedback. The sensefet matching properties to the main power mos represent the main quality factor of the device. Its current should be proportional to the main power one, maintaining the same coefficient over the entire temperature and biasing working range. In this work the effects of the edge cells layout and...
Advances in semiconductor technology have brought the performance of power transistors near the physical limit. Substantial performance enhancement of power switches will therefore require either new materials, or new devices that obey fundamentally different limits. One of the new power devices that might offer an alternative to the transistor is the microelectromechanical (MEMS) switch. Here we...
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