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The feature sizes of short channel Si MOSFETs and FINFETs are now in the range, where ballistici or quasi-ballistic transport is dominant. In this regime, conventional notion of electron mobility becomes invalid, and electrons lose energy and momentum in the contacts rather than in the device channel. In these devices, electron inertia plays an important role, and oscillations of the electron density...
Memory is an indispensible component of any modern integrated circuit. While MOSFET scaling has advanced tremendously, traditional DRAM cell scaling is hampered by the presence of a capacitor which is difficult to reduce in size. Recently, an interesting concept of a DRAM memory cell based on a transistor alone was introduced. The ultimate advantage of this new concept is that it does not require...
In this paper, we describe circuits and microsystems applications of a disruptive ultra-low-leakage design technique for drastically reducing the off current in CMOS analog and digital functions without reducing the functional performance. The technique uses a pair of source-connected n- and p-MOSFETs, implementing an auto-bias of the stand-by gate-to-source voltage of the nMOS transistor at a negative...
The use of MEMS as tuning elements is interesting for their higher performance in terms of loss and nonlinearity. Here, MEMS varactors are integrated to a patch filter through a flip-chip process in order to change the filter center frequency. The selected frequencies are the ones assigned to WiMAX frequency bands at 2.5 GHz and 3.5 GHz.
In this work the characterization of cubic GaN epitaxial films on templates obtained by nitridation of GaAs is reported. N- or p-type materials were obtained in Undoped or Mg-doped films respectively. The use of Mg compounds results in a tendency to incorporate the hexagonal phase in the films, but this effect can be avoided adjusting the experimental parameters. The results show that the materials...
The interpenetrating network morphology of the organic solar cells was investigated using a blend of P3HT:PC[70]BM at ratio of 1:0.84 wt%. To analyze the dependence of organic solar cell efficiency on the morphology of the composite was used atomic force microscopy (AFM) and transmission electron microscopy (TEM). It is experimentally identified the phase-separated domain size that is formed and distributed...
The work presented in this paper deals with the possibility of implementing a power line communication in aircraft. A tree-shaped architecture of a network has been simulated for determining the distribution of the transfer function between different points on the line. Comparison with results obtained on a real network has been performed. The performances of an OFDM link have been determined by introducing...
The development of high sensitive miniaturized sensors is of special importance for “Lab on a Chip” and biosensors development [1]. In this context and due to its n-type semiconductor character and its high chemical stability, TiO2 thin films have been proposed for application as pH and H sensors [2]. Even more, taking advantage of their high specific surface, TiO2 nanotubes have been also considered...
In this work we demonstrate that the unified model and parameter extraction method (UMEM) can be used to describe the behavior of hybrid complementary metal-oxide-semiconductor thin film transistors (CMOS TFTs) fabricated with cadmium sulfide (CdS) and pentacene as n-type and p-type active layer, respectively. Both devices were fabricated using a bottom gate configuration and top source-drain (SD)...
An irregular erosion rate in SIMS can lead to erroneous results during depth profiling analysis of semiconductor hetero-structures. In this work the dependence of erosion on the composition of AlxGA1−xAs is determined. High resolution X-ray diffraction is used to measure the alloy composition considering the deformation due to a good coupling between substrate and layer. The result shows that the...
In the CMOS MEMS design the problems are centered on the sensor integration on-a-chip and its release post-process. The extracellular planar microelectrodes are straight form integrated due the layers CMOS possibilities, however the releasement of them must be done after the CMOS fabrication process. In this regard, the work presents the complete post-process methodology and the results of the technological...
In this paper we show that the mobility reduces for OTFTs with similar channel length when the channel width is increased. The effect is shown in staggered bottom contact organic thin film transitors (OTFTs) made of the P-Type semiconductor Poly(Triarylamine) PTAA and Cytop® as insulator. It can also be seen from experiment, that this mobility reduction is associated to an increase in the density...
In this paper, we develop an analytical model to simulate strained silicon NMOSFETs, which allows to describe the drain current. Numerical simulations were performed in order to validate the model, where different technological parameters were considered (e.g. impurity concentrations in Si1−yGey and strained-silicon films). A good agreement with numerical simulations has been obtained.
In this paper a new and original approach for power allocation for cognitive users is proposed. The approach is based on the application of the order statistics (maximum terms of the variation series) for instantaneous SNR levels. Contrary to the widely applied methods, in the proposed approach, power is allocated to the groups of the OFDM sub-carriers which suffer the same flat fading. It is shown...
This work presents a new architecture of analog four-quadrant multiplier in CMOS technology based on the behavior of MOSFET in the linear region from weak to strong inversion. The proposed multiplier has voltage and current inputs and a current output, thus being adequate for the implementation of compact synapses in analog Cellular Neural Network (CNN). Simulation results exhibit low power consumption...
Multiple-gate MOSFETs are widely recognized as the most promising nanometric transistors for end of roadmap integrated circuits. These devices have therefore a great potential for low voltage, low power analog and digital applications. FinFETs fabricated on bulk wafers gained attention due to the possibility of their integration with standard bulk CMOS technology and reduced wafer cost. In the present...
We have measured gate current components from the axis perpendicular-to-the-surface. The measured channel magneto-conductance shows also a pronounced magnetic asymmetry, which suggests the channel current is flowing into different crystallographic orientations with different effective masses and hole mobilities. By monitoring the different crystallographic components of the hole flow we have enhanced...
In this paper we present a physics-based analytical model for the gate capacitance Cg in AlGaN/GaN HEMT devices. A continuous and analytical expression for the 2-DEG charge density ns is developed from the consistent solution of Schrodinger's and Poisson's equation in a quantum well with triangular potential profile. The developed ns expression is used to derive the model for Cg. The proposed model...
The design of a miniaturized broadband 4 × 4 Butler matrix has been presented. The designed Butler matrix utilizes the developed single-section coupled-line 3-dB/90° directional couplers designed with the use of a quasi-lumped element technique. The broadband 45° phase shifters have been realized as a tandem connection of two such couplers providing simultaneously transmission-line crossover. The...
This paper introduces an analytical method for calculating the equivalent inductance associated to signal vias in parallel planes with arbitrary power/ground (P/G) via distribution. The proposal is corroborated by comparing the equivalent inductances predicted by a commercial electromagnetic solver (HFSS) and those predicted by the analytical method. Excellent results are obtained demonstrating the...
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