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The advent of novel sub-micron technologies of IC fabrication led to such a decrease in lead-to-lead separation that it is not possible any more to neglect the influence of these leads on the reliability of the system operation. Both the small lead separation and the application of multilayer interconnecting systems cause parasitic electromagnetic couplings; in the case of a unipolar CMOS technology,...
Simulations of a planar micro Ion Mobility Spectrometer (μIMS) for sensing DMMP and Acetone vapours for security applications are performed. In μIMS ions are discriminated by the application of the proper separation voltages to the electrodes of the system. By simulation, optimum voltages for achieving the proper sensitivity have been obtained.
We present electrical characterization of Si(p)/GdScO3/Ru metal-oxide-semiconductor structures prepared by liquid injection metal organic chemical vapour deposition. Capacitance-voltage measurement revealed dielectric constant κ=22. Density of interface states was determined using conductance measurement. Annealing in forming gas resulted in decrease of the interface state density in the middle of...
This work presents differential amplifier designated as a part of modular biomedical sensor system (MBSS) used for EMG (electromyography) signal measurements. Except the standard features which characterize this type of device (high gain, low noise), some special requirements comprising very low supply voltage and low power consumption could be reached by application of the described amplifier. The...
In this paper we describe resistive switching in RuO2/TiO2/RuO2 structures. Electrodes (RuO2) were grown by metal organic chemical vapor deposition and dielectric TiO2 switching layers with rutile structure were prepared by atomic layer deposition. After proper nitrogen annealing of as-grown samples followed by an electro-forming procedure and forming procedure bipolar resistive switching was observed...
This paper demonstrate the feasibility of micro-power converters based on active control for harvesting power from multiple tiny piezoelectric transducers with higher efficiency than conventional passive approaches, especially in case of irregular vibrations and heterogeneous transducers. A prototype system was developed and validated in realistic conditions: three 0.5×12.7×31.8 mm3 piezoelectric...
Due to the recent advances in the microsystems field a new group of applications based in wireless applications have arisen. In order to provide these devices with the working autonomy that they need, micro direct methanol fuel cells emerge as a suitable solution because of the high energy density of the used fuel. The main challenge regarding micro fabrication technology is the fabrication of the...
The dynamic pull-in and pull-out of an electrostatically actuated and viscously damped ohmic contact RF-MEMS switch is both measured and simulated. Three different models are used for the simulations and evaluated w.r.t. measurements performed with a white light interferometer and a laser vibrometer. The evaluation shows that all models fail in predicting the initial contact phase of the membrane...
We have studied the enhancement factors (EF) in Surface Enhanced Raman Scattering (SERS) substrates prepared with self assembled ZnO nanorod arrays and Au nanocrystals. The ZnO/Au composite nanoarrays present experimental EF values as high as ~07 for detection of Rhodamine 6G (R6G) using an excitation wavelength of 633 nm. We have study the EF via numerical simulations of a single ZnO/Au composite...
Essential part of MOS-based hydrogen sensors is constituted by a dipole layer of polarized H atoms at the metal-oxide interface. This layer decreases barrier height of the Schottky diodes or causes a shift in the threshold voltage of the FET devices. Constitutive P - E (dielectric polarization versus external electric field intensity) equation of the dipole ensemble is derived supposing Langmuir-type...
This work presents a study on X-Ray radiation induced degradation mechanism on both CMOS Image Sensors (CIS) with 4-Transistor (4T) pixels and its elementary test structures. The major degradation shows an increase of dark random noise and leakage current for both the sensor and the test structures. Moreover, the quantum efficiency of the pinned-photodiode (PPD) shows a post-irradiation variation...
The DEPFET is a new type of active pixel particle detector. A MOSFET is integrated in each pixel providing the first amplification stage of the readout electronics. Excellent noise parameters are obtained with this layout. The DEPFET sensor will be integrated as an inner detector in the BELLE II experiment. A flexible measuring system with a wide control cycle range and minimal noise was designed...
The scanning electron microscope (SEM) techniques play a key role in the characterization of various inorganic and/or organic semiconducting materials, micro/nanostructures and devices. The power of the SEM methods is mainly in imaging, characterization and diagnostics of local near surface properties. Among a variety of the SEM methods, Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC)...
The indium oxide films were deposited by dc reactive magnetron sputtering from In target on unheated Si substrate with oxygen flow in the ranging from 40 to 80 sccm. The deposited films were annealed in a conventional tube at T=400°C for 1 hour in N2 atmosphere. Measured absorption coefficients of all indium oxide films were in the range the values of 2.6÷12.5×106 m-1. It was found that calculated...
The contribution reports on fabrication and characterization of TiO2 thin films on Si substrate. The TiO2 thin films are used for photonic devices in optical communication systems. The most important parameter for the waveguide structures is the refractive index. The crystalline TiO2 polymorphs can have different refractive index depending on the structure phase, which is technology dependent. The...
A series of room temperature operating double stage differential to single-ended MMIC low noise amplifiers (LNA) design are presented in this work and are based on novel high breakdown InGaAs/InAlAs/InP pHEMTs that have been developed and fabricated at the University of Manchester. All designs are optimised for the frequency range of 0.3 to 1.4GHz in line with the Square Kilometre Array (SKA) requirements...
This contribution reports on properties and characterization of InAlN/GaN structures prepared by metal organic chemical vapour deposition (MOCVD) using secondary ion mass spectroscopy (SIMS). The SIMS revealed the vertical cross section of the InAlN/GaN sample structures on SiC substrate and also visualizes the different growth procedure results. The SIMS comparison of the structures shows the Al,...
The 3D-simulation of electromagnetic fields and current flow in real-life interconnect structures enables the detailed analysis of parasitic inductive effects and, thus, provides the basis for the optimization of bus bars in high power modules.
An efficient method to accurately capture quantum confinement effects within Monte Carlo (MC) simulation while simultaneously resolving `ab initio' ionized impurity scattering via the density gradient (DG) formalism is presented. The model is applied to study the impact of transport variability due to scattering from random discrete dopants on the on-current variability in realistic nano CMOS transistors...
Monte Carlo device simulations are carried out to analyse electron transport in scaled Si and In0.3Ga0.7As MOSFETs starting from a 25 nm gate length Si and In0.3Ga0.7As MOSFETs monitoring the electron velocity, kinetic energy and sheet density along the channel at a supply voltage of 1.0 V. We have found that while the drive current is scaled Si MOSFETs dramatically increases, the current increase...
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