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Atomic layer deposition (ALD) technique at 300°C was used to prepare an Al2O3 dielectric layer, to form MOS-HFETs. The static (output and transfer) and dynamic (Capacitance-Voltage) characteristics were used for evaluation of investigated devices. From the static characteristic, an increase of the saturation drain current (up to 35%) and extrinsic transconductance (up to 10%) of the MOS-HFETs were...
We tried to assess the influence of interface states between AlGaN barrier and GaN buffer layer and interface states on C-V characteristics of the AlGaN/GaN structure. Interface donor states were modelled with discrete peak distribution in energy with certain energy with respect to the conduction band minimum and also by continuous distribution of interface traps in energy. We found that interface...
We present electrical characterization of Si(p)/GdScO3/Ru metal-oxide-semiconductor structures prepared by liquid injection metal organic chemical vapour deposition. Capacitance-voltage measurement revealed dielectric constant κ=22. Density of interface states was determined using conductance measurement. Annealing in forming gas resulted in decrease of the interface state density in the middle of...
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