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In this paper, we present the noise measurement results of InAs/AlSb HEMTs at room temperature under very low drain bias (100mV) at 30GHz. Under these dc bias conditions the transistor exhibit NFmin=1.56 dB and Gass=5.3dB @30 GHz for Pdc= 7.3μW/μm. These results are compared to our previous work and the great improvements observed open up the possibility to develop a 100mV electronics at room temperature.
This paper discusses 120nm AlSb/InAs HEMTs operating at ultra low drain. HEMT is fabricated with ohmic contact evaporation and Schottky T-gates realization. A deep mesa isolation is used to remove completely the buffer leading to air-bridge gate.
In this paper, a 200 nm n-channel inversion-type self-aligned In0.53Ga0.47As MOSFET with a Al2O3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and drain regions. The 200 nm gate-length MOSFET with a gate oxide thickness of 8 nm features the transconductance...
For more than 30 years, III-V materials and associated transistors or integrated circuits aroused of numerous studies to achieve today an industrial reality with the availability of a panel of high performance technologies. For the development of these III-V technologies, there was no established roadmap; the line of sight was essentially the increase of the operating frequency limit (more than 300GHz)...
The DC properties of 110-nm gate-length InAs/AlSb-based HEMTs at cryogenic (30 K) and room temperature (300 K) have been investigated. Compared to 300K, devices at 30 K exhibited lower on-resistance (RON) and output conductance (gDS), a higher transconductance (gm) and a more distinct knee in the IDS(VDS) characteristics. The improvement in the DC performance at cryogenic temperature should mainly...
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